超宽带接收机射频前端电路设计
发布时间：2018-08-04 21:34
【摘要】：无线通信是以高速、可靠、便捷的特性赢得了人们的关注,而超宽带系统在此基础上更是以宽频带、更高速、低功耗的优势成为了近几年研究者先后研究的对象,超宽带技术是一种新型的短距离无线通信技术,对通信行业未来的发展有巨大的意义。近年来,随着CMOS工艺截止频率不断提高,同时凭借其低成本且能够与数字电路大规模集成的特点,采用CMOS工艺完成接收机射频前端与基带数字部分大规模集成将成为可能,达到实现单芯片接收机的目的。 射频前端是天线与基带信号的连接口,随着无线通信系统的迅速发展,也给射频接收前端的芯片设计带来了巨大的挑战。射频前端中包含低噪声放大器与混频器两个模块,它们的主要作用是检测出射频频段的微弱信号将其放大并且将射频信号搬移到中频频段。这两个模块的性能好坏直接影响着整个接收系统的灵敏度,即接收系统能否接收到最小的信号幅度。因此需要对接收机的射频前端低噪声放大器与混频器进行合理的设计。 本文设计了两种工作在3GHz-5GHz频带内基于CMOS工艺的超宽带低噪声放大器电路,分别为LC匹配的超宽带LNA和低复杂度的超宽带LNA。LC匹配的超宽带LNA基于LC网络为输入匹配,改设计采用二阶巴特沃斯带通滤波器,以共源共栅结构为放大电路。该电路可实现在保证较高增益条件下噪声系数为1.1-1.6dB的指标,在1.8V恒定供电电压下,电路功耗为13.2mW。低复杂度超宽带LNA电路具有很强的可靠性,采用单端转差分Balun电路结构,电路中减小了电感的使用,进而减小了芯片设计面积,同时电路充分考虑到了外围电路对LNA的影响。在1.8V供电电压下功耗为12.5mW。 本文在经典Gilbert结构的基础上加入电流注入方法设计了一个工作频带为3GHz-5GHz范围内的双平衡混频器电路。对射频输入端口、本振端口进行了阻抗匹配,负载电路采用电阻与电容并联的方式。在1.2V供电电压下,混频器的功耗为6.9mW,在转换增益、功耗及噪声系数方面都有良好的性能。
[Abstract]:Wireless communication has attracted people's attention because of its high speed, reliability and convenience. On the basis of this, UWB system has become the research object of researchers in recent years because of its advantages of wide band, higher speed and lower power consumption. Ultra-wideband (UWB) technology is a new type of short-range wireless communication technology, which has great significance for the future development of communication industry. In recent years, with the incessant improvement of the cut-off frequency of CMOS process, and because of its low cost and large scale integration with digital circuits, it is possible to complete the large-scale integration of RF front-end and baseband digital part of receiver by using CMOS process. To achieve the purpose of single chip receiver. RF front-end is the connection between antenna and baseband signal. With the rapid development of wireless communication system, RF front-end chip design has brought great challenges. There are two modules in the RF front end, low noise amplifier and mixer. Their main function is to detect the weak signal in the radio frequency band to amplify it and move the radio frequency signal to the intermediate frequency band. The performance of these two modules directly affects the sensitivity of the whole receiving system, that is, whether the receiving system can receive the minimum signal amplitude. Therefore, it is necessary to design RF front-end LNA and mixer reasonably. In this paper, two UWB LNA circuits based on CMOS technology in 3GHz-5GHz band are designed, which are LC matched UWB LNA and low complexity UWB LNA.LC matching UWB LNA based on LC network. The second order Butterworth band-pass filter is adopted, and the common source common-grid structure is used as the amplifier circuit. This circuit can realize the index that the noise coefficient is 1.1-1.6dB under the condition of high gain. The power consumption of the circuit is 13.2 MW at 1.8 V constant power supply voltage. The ultra-wideband LNA circuit with low complexity has strong reliability. The single-end to differential Balun circuit structure is adopted, which reduces the use of inductor, and then reduces the design area of the chip. At the same time, the influence of peripheral circuits on LNA is fully taken into account in the circuit. The power consumption is 12.5 MW at 1.8 V supply voltage. In this paper, based on the classical Gilbert structure, a dual balanced mixer with a working frequency band of 3GHz-5GHz is designed by adding the current injection method. The impedance matching of RF input port and local oscillator port is carried out. The load circuit adopts the mode of parallel connection of resistor and capacitance. The power consumption of the mixer is 6.9 MW at 1.2V supply voltage, which has good performance in conversion gain, power consumption and noise coefficient.
【学位授予单位】：广西大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN851
本文编号：2165234
[Abstract]:Wireless communication has attracted people's attention because of its high speed, reliability and convenience. On the basis of this, UWB system has become the research object of researchers in recent years because of its advantages of wide band, higher speed and lower power consumption. Ultra-wideband (UWB) technology is a new type of short-range wireless communication technology, which has great significance for the future development of communication industry. In recent years, with the incessant improvement of the cut-off frequency of CMOS process, and because of its low cost and large scale integration with digital circuits, it is possible to complete the large-scale integration of RF front-end and baseband digital part of receiver by using CMOS process. To achieve the purpose of single chip receiver. RF front-end is the connection between antenna and baseband signal. With the rapid development of wireless communication system, RF front-end chip design has brought great challenges. There are two modules in the RF front end, low noise amplifier and mixer. Their main function is to detect the weak signal in the radio frequency band to amplify it and move the radio frequency signal to the intermediate frequency band. The performance of these two modules directly affects the sensitivity of the whole receiving system, that is, whether the receiving system can receive the minimum signal amplitude. Therefore, it is necessary to design RF front-end LNA and mixer reasonably. In this paper, two UWB LNA circuits based on CMOS technology in 3GHz-5GHz band are designed, which are LC matched UWB LNA and low complexity UWB LNA.LC matching UWB LNA based on LC network. The second order Butterworth band-pass filter is adopted, and the common source common-grid structure is used as the amplifier circuit. This circuit can realize the index that the noise coefficient is 1.1-1.6dB under the condition of high gain. The power consumption of the circuit is 13.2 MW at 1.8 V constant power supply voltage. The ultra-wideband LNA circuit with low complexity has strong reliability. The single-end to differential Balun circuit structure is adopted, which reduces the use of inductor, and then reduces the design area of the chip. At the same time, the influence of peripheral circuits on LNA is fully taken into account in the circuit. The power consumption is 12.5 MW at 1.8 V supply voltage. In this paper, based on the classical Gilbert structure, a dual balanced mixer with a working frequency band of 3GHz-5GHz is designed by adding the current injection method. The impedance matching of RF input port and local oscillator port is carried out. The load circuit adopts the mode of parallel connection of resistor and capacitance. The power consumption of the mixer is 6.9 MW at 1.2V supply voltage, which has good performance in conversion gain, power consumption and noise coefficient.
【学位授予单位】：广西大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN851
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