单光子探测技术基础研究
发布时间：2018-08-23 13:00
【摘要】：单光子探测是实现量子光通信的关键技术之一。本文主要针对单光子探测的核心器件雪崩光电二极管APD和光电倍增管PMT,在制冷、光子计数、以及光子干涉方面进行了较为深入的研究,主要研究内容及结论如下： 首先,对InGaAs/InP雪崩光电二极管的红外单光子探测系统的制冷装置进行了改进,该制冷系统通过四级半导体制冷片降低温度,结合真空装置减少热交换,可以将APD工作温度降低到-44.5摄氏度。利用该装置获得了InGaAs- APD模块(型号：APD050A)的低温伏安特性,结果表明,在-40摄氏度时该APD的雪崩电压为28.5伏左右。 其次,详细测量了光电倍增管(PMT,型号：CR105)的阴极和阳极伏安特性、以及渡越时间等重要参数,实验测得所用PMT的渡越时间为76.6ns左右。进一步应用光子计数方法获得了PMT的脉冲高度分布图(PHD),比较全面地揭示出噪声和光信号的幅度关系,对实现高精密的单光子探测具有重要的参考价值。进而,分析PHD图示结果,选取甄别电平,并通过大量计数统计后,获得了5pW极弱光的光子泊松分布图。 在以上工作基础上,成功进行基于脉冲干涉的光学相干性测量的实验,应用反馈稳定型光纤马赫-曾德干涉仪(MZI),结合压电陶瓷相移器,利用光脉冲干涉的方法成功测量出激光的相干长度。该方案不仅可以测量高相干性激光,而且可以测量低相干性脉冲,同时也为进一步深入研究量子干涉打好了基础。
[Abstract]:Single photon detection is one of the key technologies for quantum optical communication. In this paper, the core devices of single photon detection, avalanche photodiode (APD) and photomultiplier tube (PMT), are studied in the aspects of refrigeration, photon counting and photon interference. The main research contents and conclusions are as follows: firstly, the refrigeration device of infrared single photon detection system of InGaAs/InP avalanche photodiode is improved. Combined with vacuum device to reduce heat exchange, APD working temperature can be reduced to-44.5 degrees Celsius. The low temperature voltammetric characteristics of the InGaAs- APD module (type: APD050A) are obtained by using this device. The results show that the avalanche voltage of the APD is about 28.5 volts at -40 鈩，
本文编号：2199155
[Abstract]:Single photon detection is one of the key technologies for quantum optical communication. In this paper, the core devices of single photon detection, avalanche photodiode (APD) and photomultiplier tube (PMT), are studied in the aspects of refrigeration, photon counting and photon interference. The main research contents and conclusions are as follows: firstly, the refrigeration device of infrared single photon detection system of InGaAs/InP avalanche photodiode is improved. Combined with vacuum device to reduce heat exchange, APD working temperature can be reduced to-44.5 degrees Celsius. The low temperature voltammetric characteristics of the InGaAs- APD module (type: APD050A) are obtained by using this device. The results show that the avalanche voltage of the APD is about 28.5 volts at -40 鈩，
本文编号：2199155
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