圆波导硅探测结构对X波段电磁波模式的响应
发布时间：2018-08-30 16:45
【摘要】：采用数值模拟和理论分析方法,研究了圆波导内置n-Si探测结构对X波段几种常用电磁波模式的电场响应。首先基于强电场下的热载流子效应,设计了一种利用n-Si进行高功率脉冲实时测量的圆波导探测结构。接着采用三维并行电磁场时域有限差分方法,模拟研究并分析了TE11(两种极化方向)、TM01和TE01模式作用下圆波导探测结构内的横向电场分布特点。结果表明:不同模式下探测芯片内的横向电场均以径向电场为主,径向和角向电场幅度比约为10,而芯片在圆波导内引入的横向电场驻波比均不大于1.3。最后推导了圆波导探测结构在不同模式电场作用下的灵敏度表达式,理论分析指出了探测结构的最大承受功率与圆波导模式有关,最高可达422MW,响应时间则均为ps量级,初步证实了该探测结构可用于X波段百MW级脉冲波源在线探测的可行性。
[Abstract]:By numerical simulation and theoretical analysis, the electric field response of circular waveguide built-in n-Si detection structure to several common electromagnetic wave modes in X-band is studied. Firstly, based on the hot carrier effect in strong electric field, a circular waveguide detection structure using n-Si for real-time measurement of high power pulse is designed. Then the transverse electric field distribution in the circular waveguide probe structure under the action of TE11 (two polarization directions) TM01 and TE01 mode is simulated and analyzed by using the 3D parallel finite difference time-domain (FDTD) method. The results show that the transverse electric field in the chip is mainly radial electric field in different modes, the amplitude ratio of radial and angular electric field is about 10, and the standing wave ratio of transverse electric field introduced by chip in circular waveguide is not more than 1.3. Finally, the sensitivity expressions of circular waveguide structures under different modes of electric field are derived. The theoretical analysis shows that the maximum withstand power of the structures is related to the circular waveguide modes, with a maximum of 422MW, and the response time is of the order of ps. It is preliminarily proved that the structure can be used for the on-line detection of 100 MW pulse wave sources in X band.
【作者单位】： 西北核技术研究所;高功率微波技术重点实验室;
【基金】：国家自然科学基金重点项目(61231003)
【分类号】：TN814
[Abstract]:By numerical simulation and theoretical analysis, the electric field response of circular waveguide built-in n-Si detection structure to several common electromagnetic wave modes in X-band is studied. Firstly, based on the hot carrier effect in strong electric field, a circular waveguide detection structure using n-Si for real-time measurement of high power pulse is designed. Then the transverse electric field distribution in the circular waveguide probe structure under the action of TE11 (two polarization directions) TM01 and TE01 mode is simulated and analyzed by using the 3D parallel finite difference time-domain (FDTD) method. The results show that the transverse electric field in the chip is mainly radial electric field in different modes, the amplitude ratio of radial and angular electric field is about 10, and the standing wave ratio of transverse electric field introduced by chip in circular waveguide is not more than 1.3. Finally, the sensitivity expressions of circular waveguide structures under different modes of electric field are derived. The theoretical analysis shows that the maximum withstand power of the structures is related to the circular waveguide modes, with a maximum of 422MW, and the response time is of the order of ps. It is preliminarily proved that the structure can be used for the on-line detection of 100 MW pulse wave sources in X band.
【作者单位】： 西北核技术研究所;高功率微波技术重点实验室;
【基金】：国家自然科学基金重点项目(61231003)
【分类号】：TN814
【参考文献】
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