FeCoB基薄膜微波噪声抑制器的传导噪声抑制特性研究

发布时间：2018-09-11 06:10

【摘要】：为了获得高性能的微波噪声抑制器,采用射频磁控溅射工艺制备了FeCoB基薄膜微波噪声抑制器,并用微带线法测试了其传导噪声抑制特性。研究了薄膜噪声抑制器的工艺参数和几何尺寸对其传导噪声抑制特性的影响。结果表明,合适的低氩气压有利于其噪声抑制性能的提高;通过控制FeCoB基薄膜和SiO2介质层的几何尺寸,可以实现对其微波噪声抑制性能的连续可调,这主要归因于软磁薄膜的铁磁共振损耗和涡流损耗。制备的FeCoNiB薄膜(长25mm,宽10mm,厚250nm)微波噪声抑制器在3.4GHz时的信号传输功率损耗比Ploss/Pin达到75%。结果表明,该FeCoB基薄膜微波噪声抑制器可应用于GHz频段抗电磁干扰中。
[Abstract]:In order to obtain high performance microwave noise suppressor, FeCoB thin film microwave noise suppressor was fabricated by RF magnetron sputtering, and its conductive noise suppression characteristics were measured by microstrip line method. The effects of process parameters and geometric dimensions of thin film noise suppressor on its conductive noise suppression characteristics are studied. The results show that proper low argon pressure is beneficial to the improvement of the noise suppression performance, and that the microwave noise suppression performance can be continuously adjusted by controlling the geometric size of the FeCoB film and the SiO2 dielectric layer. This is mainly due to ferromagnetic resonance loss and eddy current loss of soft magnetic thin films. The FeCoNiB thin film (25mm in length, 10mm in width, thick in 250nm) has a signal transmission power loss of 75% higher than that of Ploss/Pin at 3.4GHz. The results show that the FeCoB thin film microwave noise suppressor can be used to resist electromagnetic interference in GHz band.
【作者单位】：重庆大学光电工程学院传感器与仪器研究中心;
【基金】：国家自然科学基金资助项目(61203215) 重庆市自然科学基金资助项目(cstc2012jjA40009)
【分类号】：TB535;TN911.4

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