高分辨率AMOLED显示屏源极驱动电路的研究与设计

发布时间：2018-09-12 17:42

【摘要】：当今显示领域中应用最为广泛的是TFT LCD技术,但是OLED凭借着自身具备的多种优势,在现今的显示移动设备领域也有了越发普及的应用。三星、LG、维信诺、京东方等显示面板厂商都有自主的OLED面板研发生产线。由于制备工艺的不断更新,制造技术的不断成熟,大尺寸显示面板的成品率逐步提高,使得实际应用中的OLED显示屏分辨率越来越高。显示驱动芯片的性能直接关系到了面板显示图像的质量,高分辨率的AMOLED显示屏意味着源极驱动电路具有更多的源极驱动通道和更快的数据传输速度,对应的输出缓冲器数目也相应增多,输出灰度电压的建立时间也相应缩短,所以高分辨率AMOLED源极驱动电路如何减少输出缓冲器数目以及提高灰度电压传输速度就具有很高的研究价值。本论文研究并设计了可以用于驱动分辨率为800-RGB×1280-dot的AMOLED显示屏的源极驱动电路。本论文结合AMOLED显示驱动理论对源极驱动系统架构进行合理的设计,同时系统参数设定也要结合实际需求,所设计的源极驱动电路由GAMMA校正及灰度电压产生电路,显示数据锁存电路,灰度电压选择器,输出缓冲器共同组成。GAMMA电压电路具有6bit的灰度电压精度,并且有6个可调的GAMMA基准电压用于调节GAMMA电压曲线。灰度电压选择器是64选1的多路选择器,根据显示数据选择出像素电路需要的灰度电压,选出的灰度电压输入到后一级的输出缓冲器。输出缓冲器直接影响了源极驱动电路的性能。本论文所设计源极输出缓冲器利用了分时共用(Timing sharing)结构,通过分时共用结构可以减少输出缓冲器的个数以此来减小芯片的面积。采用共用源极输出缓冲器的结构意味着每个缓冲器的灰度电压建立时间缩短,不仅对运放设计提出了更高的要求而且会受到面板负载本身的限制。为了解决在大面板负载下缓冲器的驱动限制,本论文还提出了一种快速充电的结构,与分时共用结构一起使用不仅可以减少总体的源极输出缓冲器的数目,并且能保证灰度电压的快速建立,这种结构很适合高分辨率大尺寸的AMOLED显示面板。本论文的源极驱动电路研究与设计采用最小线宽为0.18μm的CMOS工艺,最终进行实验仿真,验证所设计的源极驱动电路设计的正确性。
[Abstract]:Nowadays, TFT LCD technology is the most widely used in the field of display, but OLED has become more and more popular in the field of display mobile devices by virtue of its own advantages. Samsung OLED LG, Vigna, Beijing and Eastern display panel manufacturers have their own OLED panel R & D production line. Due to the continuous updating of manufacturing technology and the maturation of manufacturing technology, the yield of large-size display panel is gradually improved, which makes the resolution of OLED display screen in practical application more and more high. The performance of the display driver chip is directly related to the quality of the panel display image. The high resolution AMOLED display means that the source driver circuit has more source drive channels and faster data transmission speed. The corresponding number of output buffers has also increased, and the establishment time of the output gray voltage has also been shortened. Therefore, how to reduce the number of output buffers and improve the transmission speed of gray voltage in high resolution AMOLED source drive circuit is of great value. In this paper, the source drive circuit of AMOLED display with 800-RGB 脳 1280-dot resolution is studied and designed. In this paper, combining with the theory of AMOLED display drive, the structure of the source drive system is designed reasonably. At the same time, the system parameters must be set up in combination with the actual demand. The source drive circuit is designed by GAMMA correction and gray voltage generation circuit. Display data latch circuit, grayscale voltage selector and output buffer. Gamma voltage circuit has the gray voltage precision of 6bit, and there are six adjustable GAMMA reference voltage to adjust the GAMMA voltage curve. The grayscale voltage selector is a multiplex selector with 64 selections. According to the display data, the grayscale voltage required by the pixel circuit is selected, and the grayscale voltage selected is input to the output buffer of the next stage. The output buffer directly affects the performance of the source drive circuit. In this paper, the source pole output buffer is designed using the time-sharing (Timing sharing) structure, and the chip area can be reduced by reducing the number of output buffers. The structure of common source output buffer means that the establishment time of gray voltage of each buffer is shortened, which not only puts forward higher requirements for operational amplifier design, but also is limited by the panel load itself. In order to solve the driving limitation of buffer under large panel load, this paper also proposes a fast charging structure, which can not only reduce the total number of source output buffers, but also can be used together with time-sharing structure. This structure is suitable for high resolution and large size AMOLED display panel. The research and design of the source drive circuit in this paper is based on the CMOS process with minimum linewidth of 0.18 渭 m. Finally, the experimental simulation is carried out to verify the correctness of the design of the source drive circuit.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN873

【相似文献】