过模矩形波导中硅芯片与基模亚毫米波的作用

发布时间：2019-01-19 15:25

【摘要】：模拟研究了过模矩形波导WR10中n型硅探测芯片对TE10模亚毫米波的响应。针对过模波导WR10中内置n型硅芯片的亚毫米波探测结构,推导了基模工作时的灵敏度表达式。采用三维电磁场时域有限差分方法,模拟计算了过模波导中300～400GHz频带的TE10模亚毫米波与硅芯片的相互作用,分析了探测结构中电压驻波比和芯片内平均电场随硅芯片参数变化的规律。结果表明,在相同的芯片参数下,过模探测结构并不影响电压驻波比和芯片内平均电场的大小,但两者随频率变化的波动程度增大。在300～400GHz工作频带内,优化得到了性能较优的过模探测结构,其电压驻波比不大于2.75(335～380GHz频带内不大于1.8),线性工作区的相对灵敏度约为0.127kW-1,频率响应的波动范围在±20.5%内,最大承受功率约为0.53kW,响应时间为100ps量级,满足亚毫米波大功率脉冲的直接探测需求。
[Abstract]:The response of n-type silicon detector chip to TE10 mode submillimeter wave in an over-mode rectangular waveguide WR10 is simulated. According to the submillimeter wave detection structure of the n-type silicon chip embedded in the over-mode waveguide WR10, the sensitivity expression of the fundamental mode is derived. The interaction between the TE10 mode submillimeter wave and the silicon chip in the 300~400GHz frequency band in the over-mode waveguide is simulated by using the three-dimensional electromagnetic field finite difference time-domain method. The variation of voltage standing wave ratio (VSWR) and in-chip average electric field with silicon chip parameters is analyzed. The results show that the over-mode detection structure does not affect the VSWR and the average in-chip electric field under the same chip parameters, but the fluctuation degree between them increases with the frequency. In the operating band of 300~400GHz, the optimal over-mode detection structure is obtained. The VSWR is not more than 2.75 (335~380GHz band is not greater than 1.8), and the relative sensitivity of the linear workspace is about 0.127 kW-1. The range of frequency response is within 卤20.5%, the maximum withstand power is about 0.53kW, and the response time is in the order of 100ps, which meets the requirement of direct detection of submillimeter wave high power pulse.
【作者单位】：西北核技术研究所;高功率微波技术重点实验室;
【基金】：国家自然科学基金重点项目(61231003)
【分类号】：TN814

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