0.1-GHz~11-GHz CMOS射频接收器关键电路设计研究
发布时间：2019-02-09 11:17
【摘要】：近年来,快速发展的无线通信技术给人们生活带来了巨大的变化。现有的多个无线通信标准,包括针对广域网的蜂窝移动通信、针对局域网的无线局域网,以及针对个域网的超宽带通信等,可以覆盖所有的应用场景,实现随时随地的个人通信。多网长期共存要求无线通信终端能同时兼容多个无线通信标准。目前为止,学术界和工业界已经研究并开发了兼容蜂窝移动通信和无线局域网／全球定位系统的多标准射频集成电路,频率覆盖范围900.MHz～5.8.GHz.如果进一步覆盖短距离的超宽带通信标准,其覆盖频率范围需要扩展到11 GHz。因此,研究覆盖更宽频率范围的宽带射频集成电路具有重要意义。在此背景下,本论文针对WCDMA/WLAN/OFDM-UWB多标准兼容系统,开展了0.1-GHz～11-GHz宽带CMOS射频接收器关键电路的设计研究。研究重点是宽带低噪声放大器和宽带下变频混频器。本论文的主要贡献体现在：1)提出了一种频率范围在0.5-GHz～10.6-GHz的电感反馈结构差分低噪声放大器。在反馈回路中引入的电感可以同时实现输入阻抗匹配和高频增益补偿。不同于以往采用多个电感分别匹配输入阻抗和补偿高频增益的方法,本论文的方案所用电感少,节省了芯片面积；2)设计并实验验证了后置有源巴伦的低噪声放大器,在0.1-GHz～12-GHz范围内实现低噪声放大和单端-差分转换。相对于以往的前置有源巴伦方法,克服了输入节点对地电容对宽带输入阻抗匹配的限制；3)提出并实验验证了一种带有相位矫正网络的有源巴伦-低噪声放大器混合结构,相对于传统的有源巴伦-低噪声放大器混合结构,可以在更宽的信号频率范围内(0.1-GHz～11-GHz)实现相位失配的矫正；4)提出并实验验证了一种宽带吉尔伯特混频器,在混频器输入管的栅极和漏极增加电感来拓展混频器的带宽,实现了0.1-GHz～11-GHz频率范围内的输入信号下变频；5)提出并实验验证了一种带有可调LC-R网络的折叠式吉尔伯特混频器,可以实现切换工作频段和补偿不同频段增益；6)基于上述后置有源巴伦的低噪声放大器和宽带吉尔伯特混频器,采用0.13-μm射频CMOS工艺设计并实验验证了一款宽带射频接收器前端芯片。实测的最小噪声系数为3.35 dB,最大增益为24 dB,最高三阶交调点为-5.2 dBm7)基于上述混合结构有源巴伦低噪声放大器和带有可调LC-R网络的吉尔伯特混频器,采用0.13-μm射频CMOS工艺设计并实验验证了一款工作频段可调射频接收器前端芯片。实测的最小噪声系数为3.2 dB,最大增益为29.6 dB,最高三阶交调点为-4.2 dBm。
[Abstract]:In recent years, the rapid development of wireless communication technology has brought great changes to people's lives. Existing wireless communication standards, including cellular mobile communications for WAN, WLAN for LAN and UWB for personal area networks, can cover all application scenarios. Realize personal communication anytime, anywhere. Long-term coexistence of multi-networks requires that wireless communication terminals be compatible with multiple wireless communication standards simultaneously. So far, academia and industry have studied and developed multi-standard radio frequency integrated circuits compatible with cellular mobile communications and wireless local area networks / global positioning systems, with a frequency coverage of 900.MHz / 5.8GHz. If UWB communication standards are further covered at short distances, their frequency coverage will need to be extended to 11 GHz. Therefore, it is of great significance to study wideband RF integrated circuits with wider frequency range. In this context, the design and research of the key circuits of 0.1-GHz~11-GHz broadband CMOS RF receiver are carried out for WCDMA/WLAN/OFDM-UWB multi-standard compatible system. The research focuses on broadband low noise amplifier and broadband downconversion mixer. The main contributions of this thesis are as follows: 1) A differential low noise amplifier (LNA) with inductance feedback structure in the frequency range of 0.5-GHz~10.6-GHz is proposed. The inductance introduced in the feedback loop can realize input impedance matching and high frequency gain compensation simultaneously. Different from the previous methods of matching input impedance and compensating high frequency gain with multiple inductors, this paper uses less inductors and saves chip area. 2) the low noise amplifier of post-active Barron is designed and experimentally verified. The low noise amplifier and single-terminal differential converter are realized in the 0.1-GHz~12-GHz range. Compared with the previous pre-active Barron method, the limitation of input node to ground capacitance matching to wideband input impedance is overcome. 3) A hybrid structure of active Barron low noise amplifier with phase correction network is proposed and experimentally verified, compared with the traditional hybrid structure of active Barron low noise amplifier. The phase mismatch can be corrected in a wider signal frequency range (0.1-GHz~11-GHz). 4) A wideband Gilbert mixer is proposed and experimentally verified. The input signal in 0.1-GHz~11-GHz frequency range is realized by increasing the inductance in the gate and drain of the mixer to expand the frequency band of the mixer. 5) A foldable Gilbert mixer with adjustable LC-R network is proposed and experimentally verified, which can realize switching frequency band and compensating different frequency band gain. 6) based on the low-noise amplifier and the wide-band Gilbert mixer, an RF receiver front-end chip is designed and verified by using 0.13- 渭 m RF CMOS technology. The measured minimum noise coefficient is 3.35 dB, the maximum gain is 24 dB, the highest third-order intermodulation point is -5.2 dBm7) based on the hybrid structure active Baron low-noise amplifier and Gilbert mixer with adjustable LC-R network, An adjustable RF receiver front-end chip with operating frequency band is designed and verified by using 0.13- 渭 m RF CMOS technology. The measured minimum noise coefficient is 3.2 dB, the maximum gain is 29.6 dB, the highest third-order crossover point is -4.2 dBm..
【学位授予单位】：复旦大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TN858
本文编号：2418903
[Abstract]:In recent years, the rapid development of wireless communication technology has brought great changes to people's lives. Existing wireless communication standards, including cellular mobile communications for WAN, WLAN for LAN and UWB for personal area networks, can cover all application scenarios. Realize personal communication anytime, anywhere. Long-term coexistence of multi-networks requires that wireless communication terminals be compatible with multiple wireless communication standards simultaneously. So far, academia and industry have studied and developed multi-standard radio frequency integrated circuits compatible with cellular mobile communications and wireless local area networks / global positioning systems, with a frequency coverage of 900.MHz / 5.8GHz. If UWB communication standards are further covered at short distances, their frequency coverage will need to be extended to 11 GHz. Therefore, it is of great significance to study wideband RF integrated circuits with wider frequency range. In this context, the design and research of the key circuits of 0.1-GHz~11-GHz broadband CMOS RF receiver are carried out for WCDMA/WLAN/OFDM-UWB multi-standard compatible system. The research focuses on broadband low noise amplifier and broadband downconversion mixer. The main contributions of this thesis are as follows: 1) A differential low noise amplifier (LNA) with inductance feedback structure in the frequency range of 0.5-GHz~10.6-GHz is proposed. The inductance introduced in the feedback loop can realize input impedance matching and high frequency gain compensation simultaneously. Different from the previous methods of matching input impedance and compensating high frequency gain with multiple inductors, this paper uses less inductors and saves chip area. 2) the low noise amplifier of post-active Barron is designed and experimentally verified. The low noise amplifier and single-terminal differential converter are realized in the 0.1-GHz~12-GHz range. Compared with the previous pre-active Barron method, the limitation of input node to ground capacitance matching to wideband input impedance is overcome. 3) A hybrid structure of active Barron low noise amplifier with phase correction network is proposed and experimentally verified, compared with the traditional hybrid structure of active Barron low noise amplifier. The phase mismatch can be corrected in a wider signal frequency range (0.1-GHz~11-GHz). 4) A wideband Gilbert mixer is proposed and experimentally verified. The input signal in 0.1-GHz~11-GHz frequency range is realized by increasing the inductance in the gate and drain of the mixer to expand the frequency band of the mixer. 5) A foldable Gilbert mixer with adjustable LC-R network is proposed and experimentally verified, which can realize switching frequency band and compensating different frequency band gain. 6) based on the low-noise amplifier and the wide-band Gilbert mixer, an RF receiver front-end chip is designed and verified by using 0.13- 渭 m RF CMOS technology. The measured minimum noise coefficient is 3.35 dB, the maximum gain is 24 dB, the highest third-order intermodulation point is -5.2 dBm7) based on the hybrid structure active Baron low-noise amplifier and Gilbert mixer with adjustable LC-R network, An adjustable RF receiver front-end chip with operating frequency band is designed and verified by using 0.13- 渭 m RF CMOS technology. The measured minimum noise coefficient is 3.2 dB, the maximum gain is 29.6 dB, the highest third-order crossover point is -4.2 dBm..
【学位授予单位】：复旦大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TN858
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