氢氧等离子体预处理对单晶金刚石刻蚀坑的研究

发布时间：2018-02-26 07:23

本文关键词： 微波等离子体化学气相沉积单晶金刚石刻蚀坑　出处：《真空科学与技术学报》2017年09期 　论文类型：期刊论文

【摘要】：采用自制的微波等离子体化学气相沉积装置,在高温高压法合成的金刚石的衬底上外延生长单晶金刚石。实验分为两步,首先用氢氧等离子体在生长之前进行预处理刻蚀,然后外延生长30 h。利用金相显微镜和激光拉曼光谱来表征单晶金刚石刻蚀坑以及外延生长的单晶金刚石质量。研究结果表明,氧会优先刻蚀籽晶表面的缺陷和位错,可以通过刻蚀坑密度来判断衬底质量,且经过预处理刻蚀能消除单晶金刚石表面的缺陷。籽晶表面经刻蚀后会出现平底型和尖锥型两种倒金字塔型刻蚀坑,且晶体表面的原本缺陷或由抛光造成起的缺陷会随刻蚀时间延长、刻蚀强度增大而消失。经过氢氧等离子体预处理外延生长的单晶中非金刚石相杂质含量较少,结晶性高。
[Abstract]:Monocrystalline diamond was epitaxially grown on the substrate of diamond synthesized by high temperature and high pressure method using a self-made microwave plasma chemical vapor deposition device. The experiment is divided into two steps. Then the epitaxial growth time was 30 h. The etched pits of single crystal diamond and the quality of epitaxial growth of single crystal diamond were characterized by metallographic microscope and laser Raman spectroscopy. The results show that oxygen preferentially etches defects and dislocations on the surface of seed crystals. The substrate quality can be judged by the densities of etching pits, and the defects on the surface of single crystal diamond can be eliminated by pre-etching. The original defects on the crystal surface or the defects caused by polishing will disappear with the increase of etching time and etching strength. The non-diamond phase grown by hydrogen oxygen plasma pretreatment has less impurity content and higher crystallinity.
【作者单位】：武汉工程大学材料科学与工程学院湖北省等离子体化学与新材料重点实验室;中国科学院等离子体物理研究所;
【分类号】：O539

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