毫秒脉冲激光致硅光电二极管电学损伤的有限元分析及实验研究

发布时间：2018-04-10 16:24

本文选题：毫秒激光 + 光电二极管　；参考：《物理学报》2017年10期

【摘要】：为了研究毫秒脉冲激光致硅基PIN光电二极管电学损伤,基于热传导及弹塑性力学理论,在光电二极管内部材料各向同性并且P-I-N三层结构之间满足温度连续和热流平衡条件下,建立毫秒脉冲激光辐照硅基PIN光电二极管二维轴对称模型,采用有限元方法模拟分析了1064 nm Nd:YAG毫秒量级脉冲激光辐照硅基PIN光电二极管的温度场与应力场分布,并实验测量了硅基PIN光电二极管实验前后的电学参数.结果表明,激光辐照硅基PIN光电二极管时,温升使材料表面熔融、烧蚀,并且在空间上存在温度梯度变化,即激光辐照产生的热与应力使光敏面及硅晶格晶键损伤,最终造成光电探测器的探测性能下降.研究结果可为毫秒脉冲激光辐照硅基PIN光电二极管电学损伤机理奠定基础.
[Abstract]:In order to study the millisecond pulsed laser induced silicon PIN photodiode electrical damage, heat conduction and the elastic-plastic theory based on photodiode in the isotropic and internal material between three layers of P-I-N structure to meet the continuous temperature and heat flux under equilibrium conditions, the laser irradiation of silicon PIN photodiode two-dimensional axisymmetric finite element model of millisecond pulse. The method of simulation analysis and stress distribution of 1064 nm Nd:YAG millisecond pulsed laser irradiation of silicon PIN photodiode the magnitude of the temperature field, and measured the electrical parameters of silicon PIN photodiode before and after the experiment. The results show that the laser irradiation of silicon PIN photodiode, the temperature of the material surface melting, ablation, and the temperature gradient in the space, which is produced by laser irradiation and thermal stress of the photosensitive surface and the crystal silicon bond damage, resulting in the detection of photoelectric detector The results can lay the foundation for the electrical damage mechanism of silicon based PIN photodiodes irradiated by millisecond pulse laser.

【作者单位】：长春理工大学理学院吉林省固体激光技术与应用重点实验室;
【基金】：吉林省科学技术厅项目(批准号:20150622011JC)资助的课题~~
【分类号】：TN249;TN31

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