二维过渡金属二硫化物中自旋能谷耦合的谷电子学

发布时间：2018-04-17 09:40

  本文选题：能谷自由度 + 二维材料　； 参考：《物理》2017年05期

【摘要】：电子的电荷自由度与自旋自由度是现代电子器件的基础核心之一。随着二维材料,尤其是二维过渡族硫化物(TMDCs)的研究深入,另一个自由度——能谷——也引起了人们极大的研究兴趣。由于TMDCs中自旋与能谷的强耦合,自旋(能谷)可以通过能谷(自旋)方便地进行调控和探测,为电子自旋和能谷的相关领域提供了新的手段和方法。文章首先对能谷自由度以及TMDCs中自旋与能谷的强耦合进行了介绍,然后介绍基于圆偏振光激发和自旋注入两种方式进行的自旋调控和探测的理论和实验工作,最后对基于能谷的自旋调控进行了总结和展望。
[Abstract]:Electronic charge degree of freedom and spin degree of freedom is one of the basic core of modern electronic devices.With the further study of two-dimensional materials, especially the transition group sulfide (TMDCs), another degree of freedom-energy valley-has aroused great interest.Due to the strong coupling of spin and energy valley in TMDCs, spin (energy valley) can be easily regulated and detected by energy valley, which provides a new method and method for the related fields of electron spin and energy valley.This paper first introduces the degree of freedom of energy valley and the strong coupling of spin and energy valley in TMDCs, then introduces the theoretical and experimental work of spin regulation and detection based on circular polarized light excitation and spin injection.Finally, the spin regulation based on energy valley is summarized and prospected.
【作者单位】： 北京大学物理学院量子材料科学中心;量子物质科学协同创新中心;
【分类号】：O469
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本文编号：1763059