典型放电气体的击穿场强阈值研究

发布时间：2018-04-20 04:15

本文选题：气体击穿 + 击穿阈值　；参考：《发光学报》2017年01期

【摘要】：为了研究等离子体产生时的气体击穿特性,利用低气压条件下气体击穿场强阈值模型,分析了He、Ne、Ar、Kr、Xe和Hg蒸汽等6种典型放电气体的击穿阈值随入射波频率、电子温度、气体压强以及气体温度的变化规律。结果表明:气体击穿阈值随气体压强的增大而减小,随气体温度、电子温度和入射脉冲频率的增大而增大。气体压强和入射频率对击穿阈值的影响大于气体温度和电子温度,在所考虑的范围内,气体压强对击穿场强的影响约为100 V/m,入射脉冲频率对击穿场强的影响为50~300 V/m,气体温度和电子温度对击穿场强的影响为20~30 V/m。当考虑气体压强、气体温度以及电子温度等因素的影响时,各种气体的击穿场强阈值产生的变化规律相类似;但考虑入射频率的影响时,不同气体的击穿场强阈值差异很大。在所考虑的典型放电气体中,Xe具有最低的击穿场强阈值,He的击穿阈值最大。
[Abstract]:In order to study the breakdown characteristics of gases produced by plasma, the breakdown threshold values of six typical discharge gases, such as He-Nean Arn Kryn Xe and Hg vapor, are analyzed with the incident wave frequency and electron temperature by using the gas breakdown field intensity threshold model under low pressure. The variation of gas pressure and gas temperature. The results show that the gas breakdown threshold decreases with the increase of the gas pressure, and increases with the increase of the gas temperature, electron temperature and the frequency of the incident pulse. The influence of gas pressure and incident frequency on breakdown threshold is greater than that of gas temperature and electron temperature. The influence of gas pressure on breakdown field is about 100 V / m, the influence of incident pulse frequency on breakdown field is 50 ~ 300 V / m, and the influence of gas temperature and electron temperature on breakdown field strength is 20 ~ 30 V / m. When considering the influence of gas pressure, gas temperature and electron temperature, the breakdown field intensity threshold of various gases is similar, but considering the influence of incident frequency, the breakdown field intensity threshold of different gases is very different. Among the typical discharge gases considered, Xe has the lowest breakdown field strength threshold and he has the highest breakdown threshold.
【作者单位】：脉冲功率激光技术国家重点实验室;
【基金】：国家高技术研究发展计划(863)(2015AA0392)资助项目~~
【分类号】：O539;O461

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