基于柔性显示器件的氧化铝介电层室温制备

发布时间：2018-04-27 19:11

  本文选题：薄膜 + 柔性薄膜晶体管　； 参考：《光学学报》2017年03期

【摘要】：在室温环境下采用射频磁控溅射方法制备了氧化铝(A_l2O_3)薄膜,通过调节溅射气压实现了对薄膜特性的优化控制。当溅射功率为120 W、Ar气压强为0.13Pa时,制备的A_l2O_3薄膜具有最好的厚度均匀性,薄膜中Al和O的原子比为1∶1.67,密度为3.21g/cm~3,粗糙度为0.62nm。这种平滑、致密的薄膜结构能够有效地减少缺陷的形成,获得高击穿电压、高相对介电常数和低漏电等性能。利用优化后的A_l2O_3薄膜作为栅极绝缘层,在聚酰亚胺树脂(PI)基板上室温制备了柔性非晶态铟镓锌氧化物-薄膜晶体管(α-IGZO-TFT),其迁移率为2.19cm2/(V·s),开关比达到105,亚阈值摆幅为0.366V/decade,阈值电压为3.01V。
[Abstract]:Al _ 2O _ 3) thin films were prepared by RF magnetron sputtering at room temperature. The optimal control of the film characteristics was achieved by adjusting the sputtering pressure. When the sputtering power is 120W / ar and the pressure is 0.13Pa, the prepared A_l2O_3 thin films have the best thickness uniformity. The atomic ratio of Al and O in the films is 1: 1.67, the density is 3.21g / cm ~ (-1), and the roughness is 0.62nm. This smooth, compact film structure can effectively reduce the formation of defects and obtain high breakdown voltage, high relative dielectric constant and low leakage. A amorphous indium gallium zinc oxide thin-film transistor (伪 -IGZO-TFTT) was prepared on polyimide resin (Pi) substrate at room temperature by using the optimized A_l2O_3 film as the gate insulating layer. Its mobility is 2.19cm2/(V sn, the switching ratio is 105, the sub-threshold swing is 0.366V / decadeand the threshold voltage is 3.01V.
【作者单位】： 华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室;
【基金】：国家重点研发计划(2016YFB0401504,2016YFF0203603) 国家973计划(2015CB655004) 广东省自然科学基金资助项目(2016A030313459) 广东省科技计划(2014B090915004,2016B090907001) 中央高校基本科研业务费专项资金(2015ZP024,2015ZZ063) 发光学及应用国家重点实验室开放基金(SKLA-2016-11)
【分类号】：O484;TN321.5
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本文编号：1811956