温控太赫兹调制器多频带调制特性

发布时间：2018-05-01 09:20

本文选题：太赫兹超材料 + 多频带　；参考：《光谱学与光谱分析》2017年05期

【摘要】：基于开口谐振环结构设计了多频带太赫兹波调制器,并在谐振环的开口处及两侧均填充温敏介质锑化铟(InSb),研究了锑化铟的电磁性质随温度的变化、等效电感的组数对共振频带数目的影响以及锑化铟不同的填充方式对太赫兹波调制特性随温度的变化规律。研究结果表明,当环境温度从160K上升到350K时,锑化铟的载流子浓度和等离子体频率逐渐增大,然而等效介电常数却不断减小;每增加一组等效电感,太赫兹波调制器都会相应的增加一个共振频带;在调制器开口处和两侧均填充锑化铟时,当环境温度在160~350K变化时,温度对太赫兹波的共振频率和共振幅度的调制效果比仅在开口处或者两侧填充锑化铟时更明显,且随着温度的升高,每个共振频带所对应的共振频率均明显增大。
[Abstract]:A multi-band terahertz wave modulator is designed based on the open resonant ring structure. The temperature sensitive dielectric indium antimonide (InSb) is filled at the opening and both sides of the resonant ring. The electromagnetic properties of indium antimonide vary with temperature. The effect of the number of equivalent inductors on the number of resonance bands and the modulation characteristics of terahertz wave with different filling modes of indium antimonide vary with temperature. The results show that when the ambient temperature rises from 160 K to 350 K, the carrier concentration and plasma frequency of indium antimonide increase gradually, but the equivalent dielectric constant decreases continuously. The terahertz modulator will add a resonance frequency band correspondingly. When the modulator opening and both sides are filled with indium antimonide, when the ambient temperature changes at 160 ~ 350K, The modulation effect of temperature on the resonance frequency and amplitude of terahertz wave is more obvious than that when filled with indium antimonide only at the opening or both sides, and the resonance frequency corresponding to each resonance band increases obviously with the increase of temperature.
【作者单位】：四川大学电子信息学院;
【基金】：四川省教育厅创新团队计划项目(13Td0048) 科技部创新人才推进计划重点领域创新团队(2014RA4051)资助
【分类号】：O441

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