热退火处理对氧化铟锡薄膜光电特性的影响

发布时间：2018-05-12 14:25

  本文选题：薄膜 + 氧化铟锡薄膜　； 参考：《激光与光电子学进展》2017年01期

【摘要】：应用电子束蒸镀氧化铟锡(ITO)薄膜,在氮气环境中对ITO膜进行不同温度下快速热退火(RTA)处理。采用X射线衍射仪(XRD)、X射线光电子能谱(XPS)技术、扫描电子显微镜(SEM)、可见光分光谱仪、四探针测试仪测试了快速热退火处理对电子束蒸镀制备ITO薄膜的晶向、微结构、组分、光电特性的影响。分析结果表明,退火温度升高,有利于Sn释放5s轨道上的电子,Sn~(4+)取代In~(3+)形成新的化学键。此外,退火温度升高还提升了Sn、In原子的结合能,改变了Sn、In的氧化程度,增加了ITO薄膜晶体的载流子浓度和迁移率,改善了ITO薄膜晶体晶格畸变、缺陷密度与致密性,促进晶格失配的恢复。在450℃温度下快速热退火可获得光电特性较好的ITO薄膜。
[Abstract]:Indium tin oxide (ITO) thin films were deposited by electron beam evaporation. The ITO films were treated by rapid thermal annealing at different temperatures in nitrogen atmosphere. X-ray diffraction (XRD) technique, scanning electron microscope (SEM), visible light spectrometer (VLS) and four-probe tester were used to test the crystal orientation, microstructure and composition of ITO thin films prepared by rapid thermal annealing. The influence of photoelectric characteristics. The results show that the increase of annealing temperature is beneficial to the formation of new chemical bonds by the substitution of In~(3) for the release of 5 s electrons from Sn. In addition, the increase of annealing temperature also increases the binding energy of Sn-in atoms, changes the oxidation degree of Sn-In, increases the carrier concentration and mobility of ITO films, and improves the lattice distortion, defect density and densification of ITO thin films. Promote the recovery of lattice mismatch. ITO thin films with good photoelectric properties can be obtained by rapid thermal annealing at 450 鈩，

本文编号：1878962