高效率连续F类功率放大器及SIW背腔阵列天线的研究

发布时间：2018-03-21 07:00

本文选题：连续F类　切入点：射频功率放大器　出处：《杭州电子科技大学》2017年硕士论文　论文类型：学位论文

【摘要】：本文首先重点介绍了宽带高效率连续F类射频功放的技术,并设计了工作于1.1-1.7GHz北斗卫星导航系统频段的射频功率放大器。同时,为了满足消费者对高速率、大容量传输的需求,采用低温共烧陶瓷(LTCC)工艺,设计了一款工作于60GHz基于基片集成波导(SIW)的背腔阵列天线。SIW不仅保持了传统金属波导的高品质因数、低插损、低辐射等特性,还具有低剖面、低成本、易于与平面电路集成等优点。本文在阅读了大量文献资料基础上,整理了近几年来国内外宽带高效率连续F类的研究成果。同时归纳总结了国内外基片集成波导背腔天线的研究情况,并对毫米波天线的发展趋势有一定了解。其次介绍了射频放大器的功率晶体管、性能指标和开关类功率放大器的基础知识。通过查阅相关的文献资料,整理了目前设计宽带高效率连续F类射频功放的方法,并对输出非线性电容对连续F类功放的效率影响进行了简单的分析。接着使用ADS软件设计了工作于1.1-1.7GHz北斗卫星导航系统频段的宽带高效率射频功率放大器。采用Cree半导体公司的GaN HEMT晶体管CGH40010F,栅极电压为-2.7 V,漏极电压为28V。实测结果满足在工作频带内漏极效率平均65%以上设计目标。最后简单介绍了天线的参数指标、微带馈电、基片集成波导(SIW)和低温共烧陶瓷(LTCC)工艺。然后使用HFSS软件设计了一款带宽在5GHz的基片集成波导的背腔阵列天线。仿真结果2x2形式阵列在56.57GHz~62.13GHz范围内,回波损耗S11-15dB,增益达到10.9dBi;4x4形式阵列在57.8GHz~62.8GHz范围内,回波损耗S11-15dB,增益达到15.1dBi;并对2x2形式阵列进行了加工测试。
[Abstract]:In this paper, the technology of wideband high efficiency continuous class F RF power amplifier is introduced, and the RF power amplifier working in 1.1-1.7 GHz Beidou satellite navigation system is designed. At the same time, in order to meet the needs of consumers for high speed and large capacity transmission, In this paper, a 60GHz back cavity array antenna. SIW based on substrate integrated waveguide (SIW) is designed by using low temperature co-fired ceramic (LTCC) technology. It not only maintains the high quality factor, low insertion loss and low radiation of traditional metal waveguide, but also has low profile. The advantages of low cost and easy integration with planar circuits. In this paper, the research results of broadband, high efficiency and continuous F class at home and abroad are summarized, and the research situation of substrate integrated waveguide backcavity antenna at home and abroad is summarized. The development trend of millimeter-wave antenna is also understood. Secondly, the power transistor, performance index and basic knowledge of switching power amplifier are introduced. The current design methods of broadband and high-efficiency continuous F-type RF power amplifier are summarized. The effect of output nonlinear capacitance on the efficiency of class F power amplifier is simply analyzed. Then, a wideband high efficiency RF power amplifier working in the frequency band of 1.1-1.7 GHz Beidou satellite navigation system is designed by using ADS software. Cree Semiconductor GaN HEMT transistor CGH40010F, gate voltage -2.7 V, drain voltage 28 V. the measured results meet the design goal of average drain efficiency above 65% in the working band. Finally, the parameters of the antenna are briefly introduced. The microstrip feed, substrate integrated waveguide (SIW) and low temperature co-fired ceramic (LTCC) technology are used to design a backcavity array antenna of the integrated waveguide with a bandwidth of 5 GHz. The simulation results show that the array in 2x2 form is in the range of 56.57 GHz ~ 62.13 GHz. The return loss S11-15dB, the gain of 10.9dBiO4x4 array in the range of 57.8 GHz and 62.8GHz, and the gain of the Echo loss S11-15dB are 15.1dBi.The 2x2 array has been fabricated and tested.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75;TN820.15;TN967.1

【参考文献】