PS-VA模式中RM残留量对信赖性的影响（英文）

发布时间：2018-03-29 23:41

本文选题：PS-VA　切入点：残像　出处：《液晶与显示》2017年10期

【摘要】：PSVA技术已经广泛应用于电视技术,但是残像问题仍然没有解决,为了改善PS-VA电视屏的IS表现,本文通过UV1和UV2制程影响RM来研究RM的残留量与IS表现的关系,结果表明RM残留量和IS有很强的相关性。众所周知,离子浓度是IS问题的关键因素,基于分析RM残留量和离子浓度的关系,我们开了一种改善PS-VA模式IS问题的新技术,另外,本文提出通过设计新的母体混晶材料,使PS-VA制程后液晶具有更低RM残留量来改善IS问题,同时通过大量的测试数据验证改善效果,其中离子浓度由Toyo6254测试,通过SEM和AFM来分析表面形态。
[Abstract]:PSVA technology has been widely used in television technology, but the problem of residual image has not been solved. In order to improve the is performance of PS-VA TV screen, this paper studies the relationship between RM residue and is performance by UV1 and UV2 process. The results show that there is a strong correlation between RM residue and is. As we all know, ion concentration is the key factor of is problem. Based on the analysis of the relationship between RM residue and ion concentration, we have developed a new technique to improve the is problem of PS-VA mode. In this paper, we propose to improve the is problem by designing a new matrix mixed crystal material so that the liquid crystal after PS-VA process has lower RM residue. At the same time, the improvement effect is verified by a large number of test data, in which the ion concentration is measured by Toyo6254. Surface morphology was analyzed by SEM and AFM.
【作者单位】：河北省平板显示材料工程技术研究中心/石家庄诚志永华显示材料有限公司;深圳华星光电技术有限公司;
【分类号】：TN873

【相似文献】