光配向PI固烤时间与曝光能量对LCD光学及残影的影响

发布时间：2018-03-31 06:28

  本文选题：光配向　切入点：固烤时间　出处：《液晶与显示》2017年08期

【摘要】：采用光配向技术使PI获得配向能力并制得IPS型LCD,通过AOI光学自动检测设备以及DMS光学测量系统对在不同PI固烤时间和UV曝光能量下获得样品的预倾角、对比度及穿透率进行了量测,并研究了各条件下样品的残影(Image Sticking)性能。结果显示:在900~2 700s,400~600mJ/cm~2范围内,固烤时间和曝光能量对LCD光学性能影响较小,但对残影性能影响较大,IS随曝光量增大有恶化的趋势,且该趋势在高亚胺化程度下趋于平缓;调整固烤时间及曝光能量可以获得较佳的残影性能,固烤时间1 800s,曝光能量400~500mJ/cm~2条件的LCD残影性能较佳。
[Abstract]:The IPS type LCD was obtained by using the optical matching technique. The predip angle of the sample was obtained under different Pi curing time and UV exposure energy by the AOI optical automatic detection equipment and the DMS optical measurement system. The contrast and penetration were measured, and the residual image Sticking properties of the samples were studied under various conditions. The results showed that in the range of 900U 2 700sL 400mJ / cm ~ (2), the effect of curing time and exposure energy on the optical properties of LCD was relatively small. However, it has a tendency to deteriorate with the increase of exposure, and the trend tends to be gentle under the high imidization degree, and the better residual image performance can be obtained by adjusting the curing time and exposure energy. Solid baking time 1 800 s, exposure energy 400~500mJ/cm~2 condition of LCD residual performance is better.
【作者单位】： 昆山龙腾光电有限公司;
【分类号】：TN873
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本文编号：1689555