室温纳米压印制备多尺度金碗-金豆纳米天线阵列

发布时间：2018-04-11 05:32

本文选题：多尺度纳米刻蚀 + 金碗-金豆(PIC)　；参考：《微纳电子技术》2017年03期

【摘要】：金属纳米结构表现出独特的光电效应,在表面等离激元器件、超分辨光学成像、全光集成等领域有广泛应用。针对一种有实际需求的金碗-金豆(PIC)高分辨纳米腔的研制,提出了基于室温纳米压印技术,结合多参数各向异性刻蚀技术,研究并解决金碗-金豆多尺度纳米结构加工中关键工艺技术问题。利用双层抗刻蚀剂硅水合物(HSQ)/聚丙烯酸甲酯-聚苯乙烯嵌段共聚物(PMMA-b-PS)在刻蚀工艺中的物化性能转变和差异,发展了多参数刻蚀技术,构造出了直径120 nm渐变的碗形金属结构,同步制备了每个碗中只含一个直径约20 nm金豆,有效避免了刻蚀工艺中纳米颗粒的侧向堆积,提高了器件实际应用品质。
[Abstract]:Metal nanostructures exhibit unique optoelectric effects. They are widely used in surface isobaric devices, super-resolution optical imaging, all-optical integration and so on.In view of the development of a kind of high-resolution nano-cavity with practical requirement, a new kind of high-resolution nano-cavity based on room temperature nano-imprint and multi-parameter anisotropic etching was proposed.To study and solve the key technical problems in the multi-scale nanostructure fabrication of Jinwan-Jindou.Based on the change and difference of physicochemical properties of double layer etching agent silicon hydrate / polymethyl acid-polystyrene block copolymer (PMMA-b-PS) in the etching process, a multi-parameter etching technique was developed, and a 120nm structure of the bowl-shaped metal was constructed.Each bowl contains only one diameter of about 20 nm, which effectively avoids the lateral accumulation of nanoparticles in the etching process and improves the practical application quality of the device.
【作者单位】：中国计量科学研究院;清华大学清华-富士康纳米科技研究中心;
【基金】：国家质量基础的共性技术研究与应用资助项目(2016YFF0200602) 国家纳米科技重点研发计划资助项目(2016YFA0200901)
【分类号】：TN820.15

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