TFT-LCD器件Al电极TFT特性研究

发布时间：2018-04-20 22:40

  本文选题：沟道界面 + 漏电流　； 参考：《液晶与显示》2017年06期

【摘要】：本文对Mo/Al/Mo作为TFT-LCD器件源/漏极的TFT特性进行了研究。与单层Mo相比,存在沟道界面粗糙,I_(off)偏大问题,通过优化膜层结构,改善界面状态,得到了平整的沟道界面和良好的TFT特性。增加Bottom Mo的厚度,可以有效减少Al的渗透,防止Al-Si化合物的形成,得到界面平整的沟道;N~+刻蚀后SF6处理对特性影响不大,增加刻蚀时间可以使I_(on)和I_(off)同时降低;PVX沉积前处理气体N_2+NH_3与H_2区别不大,都可以减少沟道缺陷,而增加H_2处理时间会增强等离子的轰击作用,减少了沟道表面Al-Si化合物,但处理时间过长可能会使沟道缺陷增加;采用bottom Mo加厚,N~+刻蚀以及PVX沉积前处理等最优条件,可以得到沟道界面良好,TFT特性与单层Mo相当的TFT器件。
[Abstract]:In this paper, the TFT characteristics of Mo/Al/Mo as the source / drain of TFT-LCD devices are studied. Compared with monolayer Mo, there is a big problem of rough channel interface. By optimizing the structure of the film layer and improving the interface state, the smooth channel interface and good TFT characteristics are obtained. Increasing the thickness of Bottom Mo can effectively reduce the infiltration of Al and prevent the formation of Al-Si compounds. The formation of Al-Si compounds can be prevented by increasing the thickness of Bottom Mo. The effect of SF6 treatment on the properties is not significant after the channel N ~ (+) etching with flat interface is obtained. Increasing the etch time can make I _ stack) and I _ _ _ (_ _ _ However, if the processing time is too long, the channel defects may be increased, and the TFT devices with good channel interface and monolayer Mo can be obtained by using the optimum conditions such as bottom Mo thickening N ~ + etching and PVX deposition pre-treatment.
【作者单位】： 北京京东方光电科技有限公司;
【分类号】：TN873.93
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本文编号：1779798