V波段变频组件研究

发布时间：2019-04-23 17:30

【摘要】：60GHz毫米波通信技术因其高速传输传输速率和巨大的可用带宽广泛吸引了人们的广泛关注,被誉为未来10年内最具研究价值的通信技术。相比于国外对60GHz技术的较成熟的开发,国内对60GHz系统的容量与性能等理论知识还处于基本空白状态,因此,有着巨大的可提升的发展空间。60GHz通信技术将逐渐的步入未来的无线通信领域中去。本文主要采用混合集成电路的形式对V波段的变频电路进行了设计和加工。我们对60GHz的毫米波的特点进行了初步分析,结合国内外发展动态以及本课题给出的指标,完成了以下几个方面的基本工作:第二章中,首先介绍了毫米波电路的指标,并对其进行初步分析,设计了几种不同的方案,然后根据实际情况,确定了最终的方案。第三章中,首先介绍了波导-微带探针过渡的基本原理,并对5mm探针过渡背靠背模式进行了仿真、加工和测试,得到的结果满足指标要求。然后对射频电路上用到的各种固态元器件(毫米波低噪声放大器、毫米波开关、)以及无源器件(毫米波滤波器)的基本原理和主要的技术指标进行了分析,并按照课题选用了合适的毫米波芯片,对V波段低噪放芯片进行了单独的加工和测试,了解了其正常工作时的技术指标。设计了2个不同频段的镜频抑制滤波器,并对单个滤波器进行了仿真加工和测试,结果基本满足指标要求。第四章中,介绍了本振电路中使用到的倍频器、混频器的基本原理,分析了主要的技术指标,并对微带线的基本理论和毫米波电路装配技术进行了初步介绍。第五章中,对中频电路上使用的带通滤波器以及中频放大器的原理进行了分析和介绍,设计了中心频率在3-5GHz的交指型带通滤波器,并对其进行了仿真加工和测试,结果符合预期的指标。第六章中,根据指标,对电路整体进行了分析,最终确定了毫米波变频器的腔体和射频以及中频微带电路,初步介绍了电磁兼容的方法,并对整体电路进行加工、装配、测试以及最终的调试,得到了最后结果。最后,分析了整体电路的最终测试结果,提出了下一步进行改进的方法。
[Abstract]:60GHz millimeter wave communication technology has attracted extensive attention because of its high-speed transmission rate and huge available bandwidth. It is regarded as the most valuable communication technology in the next 10 years. Compared with the mature development of 60GHz technology abroad, the domestic theoretical knowledge of 60GHz system capacity and performance is still in the basic blank state, so, 60 GHz communication technology will step into the future wireless communication field. In this paper, the V-band frequency conversion circuit is designed and fabricated in the form of hybrid integrated circuit. We have carried on the preliminary analysis to the millimeter wave characteristic of the 60GHz, combined with the domestic and foreign development trends and the indicators given in this paper, have completed the following basic work: in the second chapter, first introduced the millimeter wave circuit index, After the preliminary analysis, several different schemes are designed, and then the final scheme is determined according to the actual situation. In the third chapter, the basic principle of waveguide-microstrip probe transition is introduced, and the 5mm probe transition back-to-back mode is simulated, processed and tested. Then the basic principles and main technical specifications of various solid-state components (millimeter-wave low noise amplifier, millimeter-wave switch) and passive devices (millimeter-wave filter) used in RF circuits are analyzed. A suitable millimeter-wave chip is selected to process and test the V-band low-noise amplifier chip separately, and the technical index of V-band low-noise amplifier is understood. Two mirror frequency suppression filters with different frequency bands are designed, and a single filter is simulated and tested. The results basically meet the requirements of the index. In chapter 4, the basic principle of frequency multiplier and mixer used in local oscillator circuit is introduced, the main technical indexes are analyzed, and the basic theory of microstrip line and millimeter-wave circuit assembly technology are introduced. In the fifth chapter, the principle of the band-pass filter and if amplifier used in the if circuit is analyzed and introduced, and the InterDigital Bandpass filter with the center frequency in 3-5GHz is designed, and the simulation processing and testing are carried out. The results were in line with the expected indicators. In the sixth chapter, according to the index, the whole circuit is analyzed, and the cavity, RF and if microstrip circuit of millimeter wave frequency converter are determined, and the electromagnetic compatibility method is introduced preliminarily, and the whole circuit is processed and assembled. Testing and final debugging, the final results are obtained. Finally, the final test results of the whole circuit are analyzed, and the method to improve the whole circuit is put forward.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN928
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本文编号：2463652