石墨烯-六方氮化硼面内异质结构的扫描隧道显微学研究

发布时间：2017-12-30 19:27

本文关键词：石墨烯-六方氮化硼面内异质结构的扫描隧道显微学研究　出处：《物理学报》2015年07期 　论文类型：期刊论文

【摘要】：石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注.本文介绍了在超高真空体系内,利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底,即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构.通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现:石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构,而非形成各自分立的畴区;在拼接边界处,石墨烯和六方氮化硼原子结构连续无缺陷;拼接边界多为锯齿形型,该实验结果与密度泛函理论计算结果相符合;拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构,六方氮化硼对石墨烯未产生电子掺杂效应.
[Abstract]:The in-plane heterostructure of graphene hexagonal boron nitride has attracted much attention because of its adjustable energy band structure. The two-step growth method was used in two kinds of substrates with strong and weak electron doping for graphene. Rh (111) and Irn (111). The morphologies and electronic structures of graphene hexagonal boron nitride monatomic layer were investigated by scanning tunneling microscope and scanning tunneling spectroscopy. Graphene and hexagonal boron nitride tend to form monolayer heterostructures. Instead of forming separate domain regions; The atomic structure of graphene and hexagonal boron nitride is continuous without defects at the splicing boundary. Most of the splicing boundaries are serrated, and the experimental results are in agreement with the results of density functional theory (DFT). The graphene and hexagonal boron nitride at the splicing interface have their own intrinsic electronic structures respectively. The hexagonal boron nitride has no electron doping effect on graphene.
【作者单位】：北京大学化学与分子工程学院北京大学纳米化学研究中心;北京大学工学院材料科学与工程系;
【基金】：国家自然科学基金(批准号:51222201,51290272,11304053,51121091) 国家科技支撑计划(批准号:2011CB921903,2012CB921404,2012CB933404,2011CB93300,2013CB932603)资助的课题~~
【分类号】：O611.2;TH742
【正文快照】： 子重构等[4-10].2010年,Ajayan组首次报道利用1引言化学气相沉积(chemical vapor deposition,CVD)方法,将甲烷和硼烷胺在铜箔上共沉积制备少层石墨烯是一种由sp2杂化碳原子组成的具有蜂h-BN-G异质结构[11].通过调控甲烷和硼烷胺的比窝状晶格的二维单原子层材料.由于石墨烯在室

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