金属微光栅及金属微柱阵列结构的制作工艺

发布时间：2018-05-05 10:47

  本文选题：金属微光栅 + UV-LIGA　； 参考：《大连理工大学》2015年硕士论文

【摘要】：随着MEMS技术的迅速发展,军事装备、通信网络信息业、生物医学工程、汽车工业等领域对金属微器件的需求日趋增多。与此同时,UV-LIGA技术作为MEMS中制作金属微器件的主要手段之一,受到了密切的关注和实际的应用。本课题主要研究了金属微光栅及金属微柱阵列结构的制作工艺,具体内容包括高深宽比镍金属微光栅和镍金属微柱阵列结构的制作及高温灰化去除SU-8胶的工艺研究三个方面。利用UV-LIGA工艺在金属基底上制作了具有高深宽比的金属微光栅。为削弱厚胶制作过程中的边珠效应,提出了“低速-高速”的匀胶方法。采用分层曝光、一次显影的方法制作了微电铸用SU-8胶厚胶胶模,解决了高深宽比厚胶胶模制作困难的问题。为了克服电铸时间长引起的铸层缺陷问题,采用分次电铸等措施制作了电铸光栅结构。同时通过线宽补偿的方法解决了溶胀引起的线宽变小问题。在去胶工序中,采用“超声-浸泡-超声”循环往复的方法。制作的金属微光栅结构的周期为130μm、凸台长宽高为900μm× 65μm×243μm,其深宽比达到5：1,尺寸相对误差≤1%,表面粗糙度≤6.17nm。利用UV-LIGA工艺在镍基底上制作了具有高深宽比、大面积的镍金属微柱阵列结构。采用高频超声显影技术,解决了微孔显影困难的问题,缩短了显影时间,制作了与基底结合力良好且图形质量高的电铸用SU-8胶胶膜。通过分层电铸,调节表面活性剂的浓度以及小电流电铸的方法解决了微孔电铸时铸层高度均匀性差的问题。最终,采用湿法化学去胶的方法,获得了203×203个、直径80μm、高度250μm的金属微柱阵列结构,尺寸相对误差分别低于2.1%和0.3%。研究了高温灰化去除SU-8胶的工艺。探究了金属基底上高温灰化法去除SU-8胶的工艺流程,经过实验得到了SU-8胶灰化的最低温度范围,针对高温灰化过程中产生的结构变形大、金属基底渗碳及结构氧化等问题,给出了具体的解决方案。高温灰化去除SU-8胶的工艺不仅可以单独应用于深宽比低于3：1的非密集的镍微结构,而且还可作为去除SU-8胶的辅助方法。
[Abstract]:With the rapid development of MEMS technology, the demand for metal microdevices is increasing in military equipment, communication network information industry, biomedical engineering, automobile industry and so on. At the same time, UV-LIGA technology, as one of the main methods to fabricate metal microdevices in MEMS, has been paid close attention to and applied in practice. In this paper, the fabrication technology of metal micrograting and metal microcolumn array structure is studied, including the fabrication of nickel metal micrograting and nickel metal microcolumn array structure with high aspect ratio and the process of removing SU-8 glue by high temperature ashing. Metal microgratings with high aspect ratio were fabricated on metal substrate by UV-LIGA process. In order to weaken the bead effect in thick rubber making, a "low speed-high speed" method was put forward. The SU-8 thick adhesive mould for microelectroforming was fabricated by using the method of layered exposure and single development, which solved the problem of making the thick adhesive mould with high depth to width ratio. In order to overcome the defects caused by long electroforming time, the electroforming grating structure was fabricated by means of graded electroforming. At the same time, the problem of line width becoming smaller caused by swelling is solved by the method of line width compensation. In the degumming process, the method of ultrasonic-immersion-ultrasonic cycle is adopted. The structure has a period of 130 渭 m, a height of 900 渭 m 脳 65 渭 m 脳 243 渭 m, a aspect ratio of 5: 1, a relative dimension error of 鈮，

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