Electron trapping properties at HfO 2 /SiO 2 interface, stud

发布时间：2023-10-28 19:04

　　Electron trapping properties at the HfO₂/SiO₂ interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO₂ shows a multiple-step process.After injection,electrons diffuse quickly toward the HfO₂/SiO₂ interface and then diffuse laterally near the interface in two sub-steps:The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through...

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