基于65nm CMOS工艺高精度片上温度传感器设计

发布时间：2018-03-13 06:21

  本文选题：CMOS　切入点：温度传感器　出处：《湖南大学》2016年硕士论文　论文类型：学位论文

【摘要】：随着集成电路工艺的飞速发展和电子产品更新换代不断向着高频率、高度集成的方向发展,芯片的温度也随之越来越高,芯片的功耗散热问题也越来越严重。在探索散热方法的同时,在芯片上集成温度传感器,用来准确的感测系统或者单一芯片的温度也是非常重要的。在这种背景之下,片上CMOS温度传感器就显示了它独特的优势。文章首先对片上温度传感器进行系统级设计,根据设计所需的性能指标和应用背景选取了基于环形振荡器结构的频率输出型温度传感器。接着详细地介绍了感温模拟模块和感温数字模块中主要模块的电路结构,并对主要模块的常用电路结构特点进行了比较。最后针对应用于射频蓝牙芯片,综合考虑精度、功耗、成本等因素,优化设计了一款测量温度范围广、精度高的片上温度传感器,并实现了所有元器件在一块芯片上集成。电路主要模块包括电压跟随器、环形振荡器、测频电路、数据转换电路等。同时,为了得到更高的精度,在精度和功耗的折中考虑下,运用MATLAB工具,拟合三次方函数表示频率和温度的关系。整个设计过程采用格罗方德公司65nm G CMOS工艺,运用cadence公司所提供的V irtuoso工具对研究和设计的温度传感器进行了电路设计,并且使用spectre电路仿真工具对各个模块电路和整个温度传感器电路进行了仿真验证,使用calibre工具对版图进行DRC、LVS检查和寄生参数提取,最后进行后仿真验证。芯片的工作电压IO为3V,内核为1.2V,整体面积为196μm×172μm。仿真结果显示,可测量温度范围从-55℃-125℃,最小测量精度为±0.8℃。
[Abstract]:With the rapid development of integrated circuit technology and the upgrading of electronic products to the direction of high frequency and high integration, the temperature of chip becomes higher and higher. The problem of power dissipation and heat dissipation is becoming more and more serious. It is also very important to integrate temperature sensors into the chip to accurately detect the temperature of a single chip. The on-chip CMOS temperature sensor shows its unique advantages. First of all, the system level design of the on-chip temperature sensor is carried out. According to the performance index and application background of the design, the frequency output temperature sensor based on the ring oscillator structure is selected. Then, the circuit structure of the main modules in the temperature sensing analog module and the temperature sensing digital module is introduced in detail. Finally, aiming at the application of RF Bluetooth chip, considering the factors such as precision, power consumption, cost and so on, the paper optimizes the design of a wide range of measuring temperature. High precision on-chip temperature sensor, and all components are integrated on a single chip. The main modules of the circuit include voltage follower, ring oscillator, frequency measurement circuit, data conversion circuit, etc. At the same time, in order to obtain higher accuracy, the main modules of the circuit include voltage follower, ring oscillator, frequency measurement circuit, data conversion circuit, etc. Under the consideration of the compromise of precision and power consumption, the relationship between frequency and temperature is expressed by using the MATLAB tool. The whole design process is based on the 65 nm G CMOS process of Grovonde Company. The temperature sensor is designed by using V irtuoso tool provided by cadence Company, and the circuit of each module and the whole temperature sensor circuit is simulated and verified by spectre circuit simulation tool. The calibre tool is used to check the layout and extract the parasitic parameters. Finally, the simulation results show that the working voltage IO of the chip is 3 V, the core is 1.2 V, and the whole area is 196 渭 m 脳 172 渭 m. The simulation results show that the temperature range can be measured from -55 鈩，

本文编号：1605153