基于PZT压电薄膜的压力传感器工艺研究
发布时间：2018-08-22 11:28
【摘要】：选用敏感材料锆钛酸铅(PZT),优化微机电系统(MEMS)微加工工艺,制作了硅基PZT压电薄膜叉指式电极结构的MEMS压力传感器。在基体Au/Ti/LNO/SiO_2/Si100上,采用溶胶-凝胶(Sol-Gel)法,在650℃高温下采用分层退火的方式进行退火,得到厚1.2μm的PZT压电薄膜。薄膜表面均匀,无裂纹。利用光刻工艺和低压溅射工艺得到平行叉指电极。制作完成PZT压电薄膜结构的微压力传感器,在弹性薄膜上施加压力,其电压输出性能较好,说明基于压电薄膜的叉指电极结构可行,为基于纳米纤维结构的微压力传感器的制作奠定了理论基础。
[Abstract]:Using lead zirconate titanate (PZT),) as a sensitive material to optimize the (MEMS) micromachining process of MEMS, a MEMS pressure sensor with PZT piezoelectric thin film electrode structure on silicon substrate has been fabricated. PZT piezoelectric thin films with a thickness of 1.2 渭 m were obtained by using sol-gel (Sol-Gel) method and layering annealing at 650 鈩，
本文编号：2196966
[Abstract]:Using lead zirconate titanate (PZT),) as a sensitive material to optimize the (MEMS) micromachining process of MEMS, a MEMS pressure sensor with PZT piezoelectric thin film electrode structure on silicon substrate has been fabricated. PZT piezoelectric thin films with a thickness of 1.2 渭 m were obtained by using sol-gel (Sol-Gel) method and layering annealing at 650 鈩，
本文编号：2196966
本文链接：https://www.wllwen.com/kejilunwen/zidonghuakongzhilunwen/2196966.html
