基于TDDB效应的年龄传感器技术研究
发布时间：2018-10-19 16:50
【摘要】：随着集成电路制造工艺技术的不断进步,器件尺寸快速缩小,电源电压持续降低,电路的集成度大大提高,可由此带来的集成电路老化问题变得日益严重。当集成电路的特征尺寸低于90nm时,栅氧化层内的电场强度急剧增大,与时间相关的栅介质击穿(TDDB,Time Dependant Dielectric Breakdown)效应已经成为集成电路芯片的主要老化原因。集成电路行业更新换代很快,电路老化后的芯片性能变差最终会被淘汰,然而这些旧芯片报废后未被销毁并重新进入市场。据报道,市场中的假冒IC芯片数量不断上涨,甚至呈指数增加。由于现今的研究技术还不够完善且不适宜用户使用,这些假冒芯片不易被检测。本文据此希望研发一种可以检测芯片使用年龄的片上传感器技术,用于监测芯片的使用时间,甄别回收芯片。本文提出的年龄传感器通过传感电路监测MOS电容的TDDB击穿,利用寿命模型计算使用年龄。针对栅氧化层TDDB效应和集成电路年龄传感器展开如下研究工作:1.对栅氧氧化层的击穿机理和几种主要的TDDB模型进行详细的分析。采用恒定电压法,针对TSMC 0.18μm工艺,对宽长比0.22/0.18,栅氧化层厚度为3.56nm的NMOSFET分别进行温度和电压应力加速实验,测试其相应的击穿时间。利用不同应力下的样品击穿时间得到相应的栅氧化层累积失效分布图和特征寿命,并完成V模型中各参数的提取与验证工作。2.学习研究年龄传感器的相关概念与研究成果,利用电路老化的TDDB效应,提出一种新型的基于冗余预兆单元的年龄传感器结构。该传感器包含应力电压生成电路、待测单元(DUT,Device Under Test)电路和微电流转换电路。相较于以往的年龄传感器设计,本文提出的传感器无需设置参考电路,只需通过对冗余待测单元(DUT)的TDDB击穿监测,利用NMOSFET的TDDB寿命模型计算出芯片的使用年龄,消除了参考电路带来的不准确性,因此寿命计算具有更高的准确性。3.设计所提传感器结构中的各模块电路,并利用Cadence Virtuoso仿真工具对电路进行仿真。结果表明,DUT中处于应力条件下的NMOSFET未发生TDDB击穿前,电路输出信号为低电平;发生TDDB击穿瞬间,电路监测到电流变化,输出信号变为高电平,实现了所提年龄传器中对电路模块的功能要求。
[Abstract]:With the continuous progress of the integrated circuit manufacturing technology, the device size is rapidly reduced, the power supply voltage continues to decrease, and the integration level of the circuit is greatly improved, which can lead to the aging problem of integrated circuit become more and more serious. When the characteristic size of integrated circuit is lower than that of 90nm, the electric field intensity in gate oxide increases sharply. The TDDB,Time Dependant Dielectric Breakdown) effect has become the main aging reason of IC chip. The IC industry is changing very quickly, and the performance of the chips after circuit aging will eventually be eliminated. However, these old chips have not been destroyed and re-entered the market after they are scrapped. According to reports, the number of counterfeit IC chips in the market continues to rise, or even exponential increase. These fake chips are not easy to detect because the current research technology is not perfect and is not suitable for users. In this paper, we hope to develop an on-chip sensor technology that can detect the age of the chip, which can be used to monitor the life time of the chip and identify the recovery chip. The age sensor proposed in this paper monitors the TDDB breakdown of the MOS capacitor through the sensor circuit, and calculates the age of use by using the life model. The research work of gate oxide TDDB effect and integrated circuit age sensor is as follows: 1. The breakdown mechanism of gate oxide and several main TDDB models are analyzed in detail. Using constant voltage method, the temperature and voltage stress acceleration experiments were carried out for NMOSFET with 3.56nm thickness of 0.22 / 0.18 for TSMC 0.18 渭 m process, and the corresponding breakdown time was measured. The cumulative failure distribution and characteristic life of gate oxide were obtained by using the breakdown time of samples under different stress. The extraction and verification of the parameters in V model were completed. 2. This paper studies the related concepts and achievements of age sensors, and proposes a new age sensor structure based on redundant precursory cells by using the TDDB effect of circuit aging. The sensor includes a stress-voltage generation circuit, a unit to be tested (DUT,Device Under Test) and a micro-current conversion circuit. Compared with the previous age sensor design, the sensor proposed in this paper does not need to set a reference circuit, only need to monitor the TDDB breakdown of the redundant unit to be tested, and use the TDDB lifetime model of NMOSFET to calculate the age of the chip. Eliminate the inaccuracy brought by reference circuit, so life calculation has higher accuracy. 3. Each module circuit in the sensor structure is designed, and the circuit is simulated by Cadence Virtuoso simulation tool. The results show that the output signal of NMOSFET in DUT is low before the TDDB breakdown occurs, and the circuit detects the change of current and the output signal becomes high level when TDDB breakdown occurs. The functional requirements of the circuit module in the proposed age transmitter are realized.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP212
本文编号：2281745
[Abstract]:With the continuous progress of the integrated circuit manufacturing technology, the device size is rapidly reduced, the power supply voltage continues to decrease, and the integration level of the circuit is greatly improved, which can lead to the aging problem of integrated circuit become more and more serious. When the characteristic size of integrated circuit is lower than that of 90nm, the electric field intensity in gate oxide increases sharply. The TDDB,Time Dependant Dielectric Breakdown) effect has become the main aging reason of IC chip. The IC industry is changing very quickly, and the performance of the chips after circuit aging will eventually be eliminated. However, these old chips have not been destroyed and re-entered the market after they are scrapped. According to reports, the number of counterfeit IC chips in the market continues to rise, or even exponential increase. These fake chips are not easy to detect because the current research technology is not perfect and is not suitable for users. In this paper, we hope to develop an on-chip sensor technology that can detect the age of the chip, which can be used to monitor the life time of the chip and identify the recovery chip. The age sensor proposed in this paper monitors the TDDB breakdown of the MOS capacitor through the sensor circuit, and calculates the age of use by using the life model. The research work of gate oxide TDDB effect and integrated circuit age sensor is as follows: 1. The breakdown mechanism of gate oxide and several main TDDB models are analyzed in detail. Using constant voltage method, the temperature and voltage stress acceleration experiments were carried out for NMOSFET with 3.56nm thickness of 0.22 / 0.18 for TSMC 0.18 渭 m process, and the corresponding breakdown time was measured. The cumulative failure distribution and characteristic life of gate oxide were obtained by using the breakdown time of samples under different stress. The extraction and verification of the parameters in V model were completed. 2. This paper studies the related concepts and achievements of age sensors, and proposes a new age sensor structure based on redundant precursory cells by using the TDDB effect of circuit aging. The sensor includes a stress-voltage generation circuit, a unit to be tested (DUT,Device Under Test) and a micro-current conversion circuit. Compared with the previous age sensor design, the sensor proposed in this paper does not need to set a reference circuit, only need to monitor the TDDB breakdown of the redundant unit to be tested, and use the TDDB lifetime model of NMOSFET to calculate the age of the chip. Eliminate the inaccuracy brought by reference circuit, so life calculation has higher accuracy. 3. Each module circuit in the sensor structure is designed, and the circuit is simulated by Cadence Virtuoso simulation tool. The results show that the output signal of NMOSFET in DUT is low before the TDDB breakdown occurs, and the circuit detects the change of current and the output signal becomes high level when TDDB breakdown occurs. The functional requirements of the circuit module in the proposed age transmitter are realized.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP212
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