基于硅酸镓镧的声表面波高温压力传感器研究
发布时间：2018-10-31 08:33
【摘要】：为实现高温环境下压力测量,研究了一种基于LGS(硅酸镓镧)材料的SAW(声表面波)高温压力传感器,理论上将电弹微扰理论与有限元方法相结合,使用有限元方法仿真计算压力作用下LGS压电基片的应力、应变场,并利用该应力应变结果,求解得到LGS压电基片在温度偏载条件以及压力扰动条件下的有效材料常数和附加材料常数,再利用得到的材料常数应用于叠加偏载的电弹微扰方程,求解得到LGS基片上SAW的频率变化,从而得到LGS压电基片的压力灵敏度fpDK。根据对300℃条件下(0,0,X)切向的LGS压电基片上各SAW传播方向所对应的压力灵敏度进行求解,选择LGS基片欧拉角为(0,0,90),其理论双通道压力灵敏度为278ppm/MPa。基于上述理论分析,制作了一种基于LGS(0,0,90)的耐高温点压式压力传递结构的SAW传感器,并搭建高温压力传感器测试环境,在-55℃至320℃温度范围内测试分析该传感器的压力响应,实验结果与理论分析较好的吻合。
[Abstract]:In order to realize pressure measurement in high temperature environment, a SAW (surface acoustic wave) high temperature pressure sensor based on LGS (lanthanum gallium silicate) is studied. The theory of electroelastic perturbation is combined with finite element method. The stress and strain fields of LGS piezoelectric substrates under pressure are simulated by finite element method, and the results of stress and strain are used. The effective material constant and the additional material constant of LGS piezoelectric substrate under the condition of temperature bias and pressure disturbance are obtained. The obtained material constant is applied to the electroelastic perturbation equation of superposition bias load. The frequency variation of SAW on the LGS substrate is obtained by solving, and the pressure sensitivity fpDK. of the LGS piezoelectric substrate is obtained. According to the pressure sensitivity corresponding to the SAW propagation direction on the tangential LGS piezoelectric substrate at 300 鈩，
本文编号：2301529
[Abstract]:In order to realize pressure measurement in high temperature environment, a SAW (surface acoustic wave) high temperature pressure sensor based on LGS (lanthanum gallium silicate) is studied. The theory of electroelastic perturbation is combined with finite element method. The stress and strain fields of LGS piezoelectric substrates under pressure are simulated by finite element method, and the results of stress and strain are used. The effective material constant and the additional material constant of LGS piezoelectric substrate under the condition of temperature bias and pressure disturbance are obtained. The obtained material constant is applied to the electroelastic perturbation equation of superposition bias load. The frequency variation of SAW on the LGS substrate is obtained by solving, and the pressure sensitivity fpDK. of the LGS piezoelectric substrate is obtained. According to the pressure sensitivity corresponding to the SAW propagation direction on the tangential LGS piezoelectric substrate at 300 鈩，
本文编号：2301529
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