MOCVD法制备的ZnO纳米结构薄膜特性及其发光器件研究

发布时间：2018-01-01 00:27

  本文关键词：MOCVD法制备的ZnO纳米结构薄膜特性及其发光器件研究　出处：《吉林大学》2016年博士论文　论文类型：学位论文

  更多相关文章： Zn O 纳米结构 PL Hall MIS 发光器件 金属衬底 MOCVD

【摘要】：本文旨在基于前人的研究之上,继续探寻Zn O基发光器件实用化的道路。考虑到Zn O纳米结构材料的诸多优异性能以及Zn O基材料面临的p型掺杂困难,我们将探寻方向集中于Zn O纳米材料以及单载流子发光器件之上。本工作中,我们对Zn O纳米材料的物性及其金属-绝缘层-半导体(MIS)发光器件物理机制做了细致的研究工作。拟利用Zn O纳米材料丰富的物理特性和多样化的制备特性,同时通过深入掌握了解MIS器件物理机制,达到增强常规Zn O基MIS器件的性能或丰富其功能性作用的目的,以期从中摸索出Zn O基器件实用化的可能途径。相应工作内容概括如下:1.采用MOCVD法,在c-Al_2O_3上制备了Zn O纳米柱薄膜。该纳米柱薄膜为双层结构,在纳米柱区域之下存在一致密薄膜区域。研究了生长温度对材料形貌及结晶质量的影响,并从热力学及生长动力学角度对实验现象予以了解释。通过光致发光(PL)表征,揭示出纳米柱和薄膜层区域辐射复合特性的差异,纳米柱区域辐射复合特性随生长温度升高的变化规律,以及纳米柱区域辐射复合特性对衬底材料弱的依赖性。对于薄膜区域的电学特性,通过Hall测试,揭示出晶界效应对电荷输运的限制机理,以及电学特性随生长温度升高而改善的物理机制。2.采用MOCVD法,在Al_2O_3和Ga N上制备了纳米墙薄膜,表征了两种衬底上纳米墙薄膜在形貌、晶体质量上的差异,并从热力学角度予以相应解释。PL表征反映出纳米墙材料相比于纳米柱材料具有更高的荧光量子效率,但是深能级相关辐射跃迁更为显著。另外,采用MOCVD法基于Ga N衬底获得了纳米金字塔薄膜。揭示了随着生长温度升高,纳米柱材料向纳米金字塔转变的形貌演变规律,期间伴随着材料晶体质量的不断改善。PL表征反映出纳米金字塔要比纳米墙结构具有更强的激子-声子耦合作用以及更高的荧光量子效率。3.基于Zn O纳米柱材料构筑了Au-Mg O-Zn O结构MIS发光器件。从空穴的产生、载流子的复合,器件的电荷输运,材料中电场分布,以及实际MIS器件的物理模型等方面,详细探讨了Mg O层厚度对MIS器件正、反向驱动下性能的影响。另外,针对常规MIS器件反偏工作下的性能劣势,设计并制备了新型MIPN结发光器件,从器件物理角度对器件的预期性能予以解释。实际器件性能与理论预期相一致。4.基于对Zn O纳米柱特性的研究工作,开展MOCVD法于金属衬底上制备Zn O材料的研究。特别的,探索Zn O材料在不锈钢衬底上随温度变化的制备特性,同时着重研究所获得的Zn O材料的光学特性。另外,基于荧光量子效率及辐射复合特性最优的Zn O纳米柱材料,制备了柔性有机-无机混合型ITO/PEDOT:PSS/PMMA/Zn O结构MIS发光器件,实现了器件电注入下较纯净的近紫外光发射,并对相应器件物理机制进行了探讨及分析。
[Abstract]:This paper based on the previous research, to explore the Zn O based light emitting device practical way. Considering the difficulties of Zn P doped O nanomaterials has some excellent performances and Zn O based materials, we will explore the direction to focus on single carrier Zn O nano material and light emitting devices. In this work, we Zn O nano material properties and metal insulator semiconductor (MIS) devices physical mechanism research work has been done in detail. The physical properties of quasi rich Zn O nano materials and diverse preparation by use of the characteristic at the same time through in-depth understand the physical mechanism of MIS devices to enhance the performance of the conventional Zn based O the MIS device or enrich its function role purpose, in order to find out possible ways of Zn O based devices. The corresponding practical work contents are as follows: 1. by the method of MOCVD in c-Al_2O_3 on the preparation of Zn O Nanopillars. The nanopillars is a double-layer structure, under the regional dense thin film nano column area. Effects of growth temperature on the morphology and crystal quality of materials, and explains from the point of view of thermodynamics and growth kinetics of experimental phenomena. By photoluminescence (PL) characterization, reveal the differences of radiation characteristics of composite the cashier m column and thin layer region, regional nano column radiative recombination characteristics changes with the increase of the growth temperature, and regional radiation characteristics of the composite nano column substrate material. The dependence of the weak electrical characteristics for thin film region, through the Hall test, reveals the mechanism of grain boundary effect on charge transport, physical mechanism and the electrical properties improved with the increase of the growth temperature of.2. by MOCVD, Al_2O_3 and Ga in N were prepared on nano wall film, characterization of two kinds of nano film on the substrate wall morphology, crystal Differences in body mass, and from the angle of thermodynamics to explain the corresponding characterization of.PL reflects the wall material in nano column compared to nano material has higher fluorescence quantum efficiency, but the deep level related radiative transition is more significant. In addition, using the method of MOCVD Ga based on N substrate obtained nano thin film. Pyramid reveals that with the growth temperature rise, evolution of nano materials to the nano morphology change column in Pyramid, accompanied by the continuous improvement of the quality of.PL crystal material characterization reflects Pyramid than nano nano wall structure has stronger exciton phonon coupling and higher fluorescence quantum efficiency of.3. Zn O nano materials based on the Au-Mg O-Zn column to build the O structure of MIS light from the device. Cavitation, recombination, charge transport devices, the electric field distribution in the material, and the actual MIS device physical model, discussed in detail The Mg thickness of O layer on the MIS device, reverse driving under the influence of the performance. In addition, the performance of conventional MIS devices for inferior work under reverse bias, the design and preparation of novel MIPN junction light emitting device, is expected to be explained on the performance of the device from the device to the point of view of physics. Performance and theoretical expectations are consistent on the actual device.4. the work of Zn O nano column based on the characteristics, study on Preparation of Zn O materials to carry out MOCVD to the metal substrate. In particular, to explore the characteristics of Zn O were prepared on stainless steel substrate material changes with temperature, while focusing on the optical properties of Zn O Materials Research Institute obtained. In addition, the Zn O nano material column the fluorescence quantum efficiency and radiation characteristics based on the optimal composite, preparation of flexible organic inorganic hybrid ITO/PEDOT:PSS/PMMA/Zn O structure of MIS light emitting device, realizes electrical injection near ultraviolet light emission is pure, and the corresponding device. The mechanism is discussed and analyzed.

【学位授予单位】：吉林大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN304.21
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本文编号：1362153