功率晶体管建模及射频与微波功率放大器设计

发布时间：2018-02-26 02:08

本文关键词： 晶体管建模神经网络映射射频与微波功率放大器开关功率放大器宽带功率放大器　出处：《天津大学》2015年博士论文　论文类型：学位论文

【摘要】：近年来,无线频谱资源日益匮乏,普及绿色通信势在必行,这导致无线通信系统的性能指标变得尤为重要。射频与微波功率放大器是决定无线通信系统中发射机的线性度、效率和带宽等指标的重要模块,该模块卓越的性能主要依赖于精确的功率晶体管模型、先进的设计方法和丰富的设计经验。然而,目前在功率晶体管建模及射频与微波功率放大器设计中有很多实际问题需要研究解决。论文围绕其中的一些亟待解决的热点问题,研究了神经网络映射技术用于异质结双极型晶体管建模的方法,同时研究了针对某些无线通信系统中射频与微波功率放大器的若干关键设计技术。论文的主要贡献和创新点总结如下:1.针对现有异质结双极型晶体管模型在大尺寸分布特性的影响下存在深饱和区精度亟待提高的问题,提出了一种神经网络映射异质结双极型晶体管模型。在是德公司的Advanced Design System软件中,利用符号定义器件实现了该模型,并验证了准确性。仿真结果显示,该模型同现有Agilent HBT模型相比,在非饱和区精度提升1.26倍,在深饱和区精度提升3.15倍,为神经网络映射法改进异质结双极型晶体管模型的工作提供了经验和指导。2.针对现有方法在设计VHF/UHF频段超宽带CMOS功放时存在面积大的难题,提出了一种三级超宽带CMOS功放结构,并在0.41 mm~2芯片内实现了0.1~1.2 GHz内良好的功率增益、效率、回波损耗等指标,这在现有CMOS功放研究文献中具有最高的Fo M1值(功率×增益×回波损耗×相对带宽/面积)。实测结果表明该功放完全满足面向行业专网应用的宽带射频收发芯片的研发需求。3.针对软件无线电系统中超宽带CMOS功放的设计瓶颈,成功将堆叠技术首次应用到VHF~C波段超宽带CMOS功放设计中,完善了现有堆叠CMOS功放设计原理中源极输入阻抗分析方法,并在0.64 mm~2芯片内实现了输出功率大于0.2 W、上下限频率比为60倍的1 d B带宽,这在现有CMOS功放的研究文献中具有最高的Fo M2值(功率×上限频率/(面积×下限频率))。实测结果表明该集成功放能够满足宽带射频收发芯片的研发需求。
[Abstract]:In recent years, due to the scarcity of wireless spectrum resources, it is imperative to popularize green communication, which makes the performance index of wireless communication system become more and more important. Radio frequency and microwave power amplifier determine the linearity of transmitter in wireless communication system. Efficiency and bandwidth are important modules whose excellent performance depends mainly on accurate power transistor models, advanced design methods and rich design experience. At present, there are many practical problems to be solved in power transistor modeling and RF and microwave power amplifier design. The modeling method of heterojunction bipolar transistors using neural network mapping technique is studied. At the same time, some key design techniques of RF and microwave power amplifiers in some wireless communication systems are studied. The main contributions and innovations of this paper are summarized as follows: 1. Aiming at the existing heterojunction bipolar transistor models in large scale. Under the influence of inch distribution characteristics, the accuracy of deep saturation zone needs to be improved. In this paper, a neural network mapping heterojunction bipolar transistor model is proposed. In the Advanced Design System software of Germany Company, the model is realized by using symbol definition device, and the veracity is verified. The simulation results show that, Compared with the existing Agilent HBT model, the accuracy of this model is 1.26 times higher in unsaturated region and 3.15 times in deep saturation zone. This paper provides experience and guidance for improving the model of heterojunction bipolar transistors using neural network mapping method. Aiming at the problem of large area in the design of VHF/UHF band UWB CMOS power amplifier by existing methods, a three-stage UWB CMOS power amplifier structure is proposed. The good power gain, efficiency, echo loss and so on are realized in 0.41 mm~2 chip. It has the highest Fo M1 value (power 脳 gain 脳 return loss 脳 relative bandwidth / area) in the existing CMOS power amplifier research literature. The measured results show that the power amplifier can satisfy the broadband RF transceiver chip for the application of industry private network. Aiming at the bottleneck of design of UWB CMOS power amplifier in software radio system, The stacking technique is successfully applied to the design of VHF~C band UWB CMOS power amplifier for the first time, and the method of source input impedance analysis in the design principle of stack CMOS power amplifier is improved. The output power is more than 0.2 W and the ratio of upper and lower limit frequency is 60 times in 0.64 mm~2 chip. It has the highest Fo M2 value (power 脳 upper frequency / area 脳 lower limit frequency) in the existing CMOS power amplifier research literature. The measured results show that the integrated power amplifier can meet the research and development needs of broadband RF transceiver chips.
【学位授予单位】：天津大学
【学位级别】：博士
【学位授予年份】：2015
【分类号】：TN322.8;TN722.75

【相似文献】