Si上锑化物的MOCVD成核生长特性研究及热光伏器件结构模拟

发布时间：2018-02-27 18:06

  本文关键词： 锑化物 金属有机化学气相沉积 成核 热光伏电池 模拟　出处：《吉林大学》2016年博士论文　论文类型：学位论文

【摘要】：锑化物材料作为窄禁带直接带隙半导体,具有较小的禁带宽度和载流子有效质量,较大的电子饱和漂移速度及电子迁移率等优良的光电性能,在红外激光器、光电探测器、热光伏电池以及高速电子晶体管等方面具有重要应用。不过锑化物衬底价格高、半绝缘衬底难制备、晶格常数大导致其难于异质外延,其应用因此受到了很大限制。而Si材料经过多年发展,在集成电路相关领域发展日益成熟,具有材料价格低廉、来源广泛、晶圆尺寸大、加工工艺成熟等优势。因此将锑化物材料与Si材料相结合发挥各自优势具有非常巨大的发展潜力和应用前景。本文利用MOCVD技术首先研究了Si上Ga Sb的初期成核,分别从生长参数(生长温度、气相III/V、有机源输入量)、过程参数(生长时间、退火时间)以及其他相关参数对Ga Sb初期成核的形貌和数量的影响,并从热力学和动力学的角度分析研究其中所涉及的成核机理。其次在Ga Sb衬底上制备了In Ga Sb薄膜,分别从生长温度、气相V/III和气相Ga/III等生长参数研究了其对薄膜的表面形貌、结晶质量、材料组分等性质的影响。另外,使用PC1D软件,结合Si、Ga Sb和In Ga Sb材料设计、模拟并优化了Ga Sb/Ga In Sb单结和双结(叠层)热光伏电池,分析了电池中各层参数对单结和双结叠层电池的输出特性的影响,并根据模拟结果优化器件结构。
[Abstract]:As a narrow band gap semiconductor, antimonide has small band gap and carrier effective mass, large electron saturation drift velocity and electron mobility, etc., in infrared lasers, photodetectors, antimonides, antimonides, antimonides, antimonides and antimonides have good photoelectric properties, such as small band gap, carrier effective mass, large electron saturation drift velocity and electron mobility. Thermal photovoltaic cells and high speed electronic transistors have important applications. However, antimonide substrates are expensive, semi-insulating substrates are difficult to be fabricated, and large lattice constants make it difficult to heteroepitaxy. As a result, its application has been greatly restricted. After years of development, Si materials have developed increasingly mature in the related fields of integrated circuits, with low cost, wide sources and large wafer size. Therefore, it has great development potential and application prospect to combine antimonide materials with Si materials. In this paper, the initial nucleation of Ga SB on Si is studied by using MOCVD technology. The effects of growth parameters (growth temperature, gas phase III / V, organic source input), process parameters (growth time, annealing time) and other related parameters on the morphology and quantity of Ga SB nucleation were studied. The nucleation mechanism of the films was studied by thermodynamics and kinetics. Secondly, in Ga SB thin films were prepared on GASB substrates. The surface morphology of the films was investigated by the growth parameters such as growth temperature, gas phase V / III and gas phase Ga/III, respectively. In addition, PC1D software was used to simulate and optimize Ga Sb/Ga in SB single junction and double junction (stacked) photovoltaic cells, which were designed by combining with SiGa-Sb and in Ga-Sb materials. The effects of the parameters of each layer on the output characteristics of single-junction and double-junction laminated batteries are analyzed, and the structure of the devices is optimized according to the simulation results.
【学位授予单位】：吉林大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN304.055;TM914
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本文编号：1543747