硅钠米光波导无源器件及功能集成

发布时间：2018-03-02 15:35

本文选题：硅光子学　切入点：硅纳米线波导　出处：《浙江大学》2016年博士论文　论文类型：学位论文

【摘要】：互联网真正将人们带入了信息全球化的时代,极大地促进了信息数据的交互需求。而光通信网络作为唯一可能提供支持的技术,正被这一不断膨胀的需求所刷新。近年来,全球的骨干光网络已经陆续升级至单波长100G速率的相干光通信系统,而下一代400G,乃至1T的光网络也势在必行。基于硅基材料平台的集成光学芯片,由于具有与传统半导体产业中的CMOS工艺相兼容的巨大成本优势,成为最具前景的技术之一,由其发展而来的研究热点称之为硅光子学。本文针对硅光子学这一热点课题,就硅纳米线波导器件及其功能模块集成进行了细致的理论探索与实验求证。首先,我们对硅纳米线波导器件的工艺制作与测试表征进行了大量的实验摸索,确立了快速而高效的电子束曝光工作模式,并针对耦合光栅的波长敏感特性,确立了对器件响应进行归一化补偿的必要性。基于此制作并测试表征了硅纳米线波导的传输损耗在1.5～4.2dB/cm,设计优化并实验制作了一系列基于硅纳米线波导的无源器件,包括3dB功率分束器、微反射器以及基于阵列波导光栅(Arrayed Waveguide Grating, AWG)的波分复用器件。所有器件的工艺重复性良好。其次,我们研究了基于马赫曾德干涉仪(Mach-Zehnder Interferometer, MZI)结构的热光调谐器件。实验制作的8通道反射式热光可调光衰减器的动态范围均超过了30dB。此外,我们研制了基于弯曲定向耦合器的超宽带MZI热光开关,获得了小于1dB的插入损耗和超过20dB的消光比,其工作带宽超过了140nm。进一步,我们将两个全同AWG与八个超宽带低损耗热光开关进行了单片集成,实现了较为复杂的可重构光分插复用器功能模块,其各个波长通道、路径通道的动态开关范围均超过了20dB。最后,我们基于常规的AWG结构,并充分利用其结构的对称性,实现了单个AWG对两路信号的双向传输功能。基于这一特性,我们首先将梳状滤波器与单个双向AWG相级联,实现了通道间隔为200GHz的波分解复用器,而性能可比于通道间隔为400GHz的波分解复用器。其次,我们将偏振分束器、偏振旋转器与单个双向AWG相级联,实现了偏振复用-波分复用的混合解复用器。此外,通过将常规偏振分束器与TM模起偏器相级联,显著提高了器件的性能,在超过60nm的范围内同时对双偏振的光均具有超过20dB的消光比以及小于1dB的插入损耗。这一系列功能集成模块的良好工作特性,为今后更大规模的硅光链路系统的集成提供了重要的实验保障。
[Abstract]:The Internet has really brought people into the era of information globalization, which has greatly promoted the interactive demand of information data. As the only possible support technology, optical communication network is being refreshed by this expanding demand in recent years. The global backbone optical network has been upgraded to a coherent optical communication system with a single wavelength of 100G, and the next generation optical network of 400Gand even 1T is imperative. Because of its huge cost advantage of compatibility with CMOS process in traditional semiconductor industry, it has become one of the most promising technologies, and the research hotspot from its development is called silicon photonics. In this paper, the integration of silicon nanowire waveguide devices and their functional modules is discussed in detail. Firstly, a large number of experiments have been carried out on the fabrication and characterization of silicon nanowire waveguide devices. The fast and efficient mode of electron beam exposure is established, and the wavelength sensitivity of the coupled grating is analyzed. The necessity of normalized compensation for device response is established. Based on this, the transmission loss of silicon nanowire waveguide is 1.5 ~ 4.2 dB / cm. A series of passive devices based on silicon nanowire waveguide are optimized and experimentally fabricated. Including 3dB power splitter, microreflector and arrayed Waveguide multiplexing (AWG-based) based on arrayed Waveguide grating. We have studied the thermo-optical tuners based on Mach-Zehnder Interferometer (MZI) structure. The dynamic range of the 8-channel reflective thermo-optical tunable attenuators is more than 30 dB. An ultra-wideband MZI thermooptic switch based on bending directional coupler is developed. The insertion loss of less than 1 dB and extinction ratio of more than 20 dB are obtained. The operating bandwidth exceeds 140 nm. We have integrated two identical AWG and eight ultra-wideband low-loss thermo-optical switches in a single chip. We have realized a more complex function module of reconfigurable optical add / drop multiplexer, each wavelength channel of which has been realized. The dynamic switching range of the path channel exceeds 20 dB. Finally, based on the conventional AWG structure and taking full advantage of the symmetry of its structure, we realize the bidirectional transmission function of a single AWG to two signals. First, we cascade the comb filter with a single bidirectional AWG phase to realize a 200GHz wavelength decomposition multiplexer with a channel interval, and the performance of the filter is better than that of the wavelength decomposition multiplexer with a channel interval of 400GHz. Secondly, we use a polarization beam splitter. A hybrid demultiplexer with polarization multiplexing and wavelength division multiplexing is realized by cascading the polarization rotator with a single bidirectional AWG phase. In addition, the performance of the device is greatly improved by cascading the conventional polarization splitter with the TM mode polarizer. In the range of more than 60 nm, the extinction ratio and insertion loss of the dual polarization light are over 20 dB and less than 1 dB simultaneously. It provides an important experimental guarantee for the integration of silicon optical link system in the future.
【学位授予单位】：浙江大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN252

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