600V单片集成智能功率驱动芯片关键技术研究

发布时间：2018-03-08 12:31

  本文选题：单芯片集成　切入点：智能功率驱动　出处：《东南大学》2016年博士论文　论文类型：学位论文

【摘要】：单片集成智能功率驱动芯片属于高低压兼容功率集成电路,其内部集成有功率器件、高压驱动电路,以及故障检测、信号产生、智能控制等低压逻辑电路。由于其功能与结构的高度集成化,使得应用系统分立元件个数减少、系统成本降低及应用可靠性得到大幅提升。目前,单片集成智能功率驱动芯片在智能家电、新能源交通工具及智能机器人等高端领域得到广泛使用,成为以上系统的核心元件之一。但是,系统应用中所面临的大功率、感性负载及高开关速度等条件也对单片集成智能功率驱动芯片的设计提出了新的挑战,如何提升芯片效率、提高抗噪能力、优化故障检测及保护精度等,是单片集成智能功率驱动芯片研发所应关注的重点。本文针对以上关键问题,系统性地对单片智能功率驱动芯片的功率栅驱动技术、故障检测及保护技术以及高精度信号产生技术进行了深入的研究,提出了相应的优化技术或改进方法,并基于华润上华0.5μm 600V BCI (Bipolar-CMOS-IGBT) SOI (Silicon-On-Insulator)高低压兼容工艺完成了芯片的流片验证。论文的主要研究工作包括：1.深入分析了功率器件开关损耗与电流电压过冲的形成机理,重点剖析了低损耗和低过冲这对矛盾的本质原因,指出优化开关损耗和开关过冲的关键在于对dICE/dt和dVCE/dt的独立控制,进而提出了一种驱动能力自适应调节的功率栅驱动电路,优化了损耗和过冲之间的折中关系。测试结果表明,与传统结构相比,在关断损耗相同的条件下,电压过冲减小了52.4%。2.分析了单片集成智能功率驱动芯片的温升机理,提出了一种新型高线性度高灵敏度的温度检测技术。利用双极晶体管基极-发射极电压的非线性项与集电极电流有关、线性项与集电极电流无关的特性,消去温度非线性变化项,得到与温度成线性关系的电压。实验结果表明,采用该新型结构的温度检测电路,线性度可达99.95%,灵敏度为-10.17mV/℃。3.提出了一种高精度的新型电流模带隙基准,采用双反馈环路与四BJT交叉耦合的带隙结构,有效抑制了运算放大器失调电压及电流镜失配对输出电压精度的影响,与传统结构相比,新结构输出电压的相对误差仅为原来的1/4。4.提出了一种新型张弛振荡器结构,通过采用浮动充放电电容简化了电路结构,减小了环路延时对振荡器频率的影响,新型张弛振荡器每个周期内环路总延时从4td降低至2td,提高了振荡频率与控制电流之间的线性度,测试结果表明,输出信号频率的非线性度小于0.86%。5.完成了单片集成智能功率驱动芯片中低压差线性稳压器电路、霍尔输入级电路、三相逻辑处理电路、故障自恢复电路等其它关键电路的分析与设计。基于上述关键技术及核心电路的研究成果,研制了一款单片集成智能功率驱动芯片,进行了全芯片的版图设计及流片验证,完成了包括传输特性、开关特性及保护功能在内的测试和考核。
[Abstract]:The monolithic integrated intelligent power drive chip belongs to the high and low voltage compatible power integrated circuit. Its internal integration includes power device, high voltage drive circuit, fault detection, signal generation, Low voltage logic circuits such as intelligent control. Due to the high integration of function and structure, the number of discrete components in application system is reduced, the system cost is reduced and the reliability of application is greatly improved. The single-chip integrated intelligent power drive chip has been widely used in the high-end fields such as smart household appliances, new energy vehicles and intelligent robots, and has become one of the core components of the system. The inductive load and high switching speed also pose a new challenge to the design of the single-chip integrated intelligent power drive chip. How to improve the efficiency of the chip, improve the anti-noise ability, optimize the fault detection and protection accuracy, etc. It is the focus of the research and development of single chip integrated intelligent power drive chip. In this paper, the power gate drive technology of the single chip intelligent power drive chip is systematically studied in view of the above key problems. The fault detection and protection technology and high-precision signal generation technology are deeply studied, and the corresponding optimization techniques or improved methods are put forward. The chip verification is completed based on the high and low voltage compatible technology of China Resources China Resources China #number0# 渭 m 600V BCI / Bipolar-CMOS-IGBT) SOI / Silicon-On-Insulator. The main research work in this paper includes: 1. The mechanism of power device switching loss and current and voltage overshoot is deeply analyzed. This paper analyzes the essential reason of the contradiction between low loss and low overshoot, points out that the key of optimizing switching loss and switching overshoot lies in the independent control of dICE/dt and dVCE/dt, and then puts forward a kind of power gate drive circuit with adaptive driving ability. The tradeoff relationship between loss and overshoot is optimized. The test results show that the voltage overshoot decreases by 52.40.2. the temperature rise mechanism of the single-chip integrated intelligent power drive chip is analyzed under the same turn-off loss. A new temperature detection technique with high linearity and high sensitivity is proposed. The nonlinear term of base emitter voltage of bipolar transistor is related to collector current, and the linear term is independent of collector current. The nonlinear variation of temperature is eliminated and the voltage linearly related to temperature is obtained. The experimental results show that the new structure of temperature detection circuit is used. The linearity is up to 99.95 and the sensitivity is -10.17mV / 鈩，

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