毫米波无源元件与天线技术研究

发布时间：2018-03-09 21:59

本文选题：基片集成波导　切入点：背腔天线　出处：《东南大学》2016年博士论文　论文类型：学位论文

【摘要】：社会经济的发展深刻地改变着人们之间的通信方式。高度集成化和功能的不断外延,使得手机已不限于人与人之间的通信,而是逐渐成为连接任何人与物的工具。为了应对日益增长的通信流量,发展新一代(5G)无线通信技术就显得非常必要。5G将是多种技术多种体制的融合,而且将扩展到毫米波频段,因此大幅度提高系统集成度将成为关键技术途径。射频与天线是无线系统中的关键子系统和部件,其性能优劣和集成度将直接影响系统的性能和集成度。在毫米波频段,传统的立体金属波导显然不再适合上述要求。因此,平面化的毫米波无源元件和天线就变得至关重要。本论文主要基于近十几年发展起来的基片集成波导(SIW)技术,针对下一代无线通信技术,研究并实现高性能的毫米波无源元件与天线。论文的安排如下:第一章简要介绍了一些关键无源射频元件与天线的背景、当前无线通信所面临的挑战和本论文的研究目标与内容。第二章提出了一种具有宽带和高增益特性的背腔互补三角形环(TCSRS)天线。SIW腔用于激励TCSRS天线。首先针对单元天线进行了原理研究,然后扩展到阵列。针对28 GHz和45 GHz 5G候选频段采用0.508mm厚的Rogers5880微波基片进行了设计和实验验证。在28 GHz和45 GHz频段分别获得了 16.67%和22.2%的阻抗带宽;2×2天线阵在30 GHz和50 GHz测得的峰值增益分别为13.5 dBi和15 dBi。基于双层板结构和缝隙耦合又进一步将TCSRS天线扩展到2 × 4阵列,在48 GHz上获得的最大增益为16.28 dBi。这部分工作已发表在IEEE Trans.on Antennas and Propagation.第三章提出了一种45 GHz频段双层板缝隙耦合2 × 2和4 × 4微带天线阵。实测的2× 2阵列天线的阻抗带宽为25%、3dB增益带宽为19%、峰值增益为14 dBi;4×4天线阵的阻抗带宽为30%、3 dB增益带宽为18%、峰值增益为17.4 dBi.第四章基于SIW技术提出了一种背腔圆极化圆形贴片(CB-(CP)2)天线,其圆形贴片谐振在TMu主模,SIW矩形腔谐振在其TE101主模。为了产生圆极化,圆形贴片天线与SIW腔的上表面通过两个几乎垂直的金属带连接。在Ka波段实现了 9.5%的阻抗带宽和2%的3 dB轴比(AR)带宽,在33.8 GHz上的峰值增益为8.1 dBi。在此基础上,通过增加更多的谐振槽又扩展实现了双频段双圆极化天线。这部分工作已录用并将发表在Wiley Interscience,Microwave and Optical Technology Letters.第五章提出了一种简单的宽带三端口正交模耦合器(OMT)结构。该结构不需要短路销钉、金属隔板或金属角锥等。三端口包括:2.54mm×2.54mm的方波导端口和两个正交放置的2.54mm× 1.27mm WR-10矩形波导端口。在70-95 GHz频段进行了设计和测试,带宽达到30%,仿真的插损小于0.3dB,极化隔离优于35dB。这部分工作发表在IEEE International Wireless Symposium 2015.第六章利用SIW腔的二阶凋落模提出了一种新颖的双频段滤波器,采用厚度为0.508mm的Rogers RT/Duroid 5880基片在Ka波段进行了实验验证。两个频段中心频率比为(FR)为1.073,测试的两个频带带内回波损耗优于-15dB,频带隔离度优于40dB。这部分工作发表在IEEE 2015 Asia-Pacific Microwave Conference.
[Abstract]:The economic and social development profoundly changing the means of communication between people. The ever expanding high integration and function, the mobile phone is not confined to the communication between people, but gradually become connected to any people and things of the tool. In order to cope with the growing traffic, the development of a new generation (5G) wireless communication it is very necessary to.5G technology is the integration of a variety of kinds of technology system, and will extend to the millimeter wave band, thus greatly improve the system integration approach will become the key technology. RF and antenna is the key subsystems and components in wireless system, its performance and integration will directly affect the system performance and integration. In millimeter wave band, the traditional stereo metal waveguide is clearly no longer suitable for the above requirements. Therefore, the plane of millimeter wave passive components and antennas is very important. This paper is mainly based on the past The substrate integrated waveguide more than ten years to develop (SIW) technology for the next generation of wireless communication technology, the research and implementation of high performance millimeter wave passive components and antennas. The arrangement of the thesis are as follows: the first chapter briefly introduces some key components and passive RF antenna, the wireless communication and the challenges the research objectives and contents. The second chapter presents a back cavity with broadband and high gain characteristics of complementary triangle ring (TCSRS) antenna.SIW cavity for excitation TCSRS antenna. Firstly according to the principle of the antenna unit, and then extended to the array. For 28 GHz and 45 GHz 5G candidate bands with 0.508mm thick Rogers5880 microwave substrate was designed and verified experimentally. The impedance bandwidth of 16.67% and 22.2% respectively in 28 GHz and 45 GHz band; the peak gain of 2 x 2 array antenna at 30 GHz and 50 GHz measured respectively 13. 5 dBi and 15 dBi. double panel structure and coupling based on TCSRS antenna and further extended to 2 x 4 array, the biggest gain in the 48 GHz 16.28 dBi. for this part of the work has been published in the IEEE Trans.on Antennas and Propagation., the third chapter presents a 45 GHz band double plate slot coupling 2 x 2 and 4 * 4 microstrip antenna array. The measured impedance bandwidth of 2 * 2 array antenna for 25% 3dB, the gain bandwidth is 19%, the peak gain of 14 dBi; 4 * 4 array antenna impedance bandwidth of 30%, 3 dB gain bandwidth is 18%, the peak gain of 17.4 dBi. fourth SIW technology presents a back cavity based on the circularly polarized circular patch (CB- (CP) 2) the circular patch antenna, resonant in TMu mode, SIW rectangular cavity in the TE101 main mode. In order to produce circular polarization, circular patch antenna and the SIW cavity on the surface by two almost vertical metal band at Ka band is connected. The impedance bandwidth of 9.5% and 2% 3 dB axial ratio (AR) bandwidth, the peak gain at 33.8 GHz for 8.1 dBi. on the basis of this, by increasing the resonant tank more and the expansion of the realization of the dual band dual polarized antenna. This work has been accepted and will be published in Wiley Interscience, Microwave and Optical Technology Letters., the fifth chapter puts forward a simple three port broadband orthogonal mode coupler (OMT) structure. This structure does not need the pins, the metal plate or metal pyramid. Three port includes a square waveguide port 2.54mm * 2.54mm and two * 1.27mm 2.54mm placed orthogonal WR-10 rectangular waveguide is designed and port. The test on the 70-95 GHz band, the bandwidth reaches 30%, the insertion loss is less than 0.3dB simulation, polarization isolation is better than 35dB. in which IEEE International Wireless Symposium 2015., the sixth chapter uses SIW cavity two order litter Model presents a novel dual band bandpass filter with a thickness of 0.508mm and Rogers RT/Duroid 5880 substrates were tested in the Ka band. The two frequency band center frequency ratio (FR) was 1.073, the test two band band return loss is better than -15dB, the isolation is better than the 40dB. band of this part of the work: in the IEEE 2015 Asia-Pacific Microwave Conference.

【学位授予单位】：东南大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN820;TN713;TN622

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