高电子迁移率晶体管微波建模与参数提取研究

发布时间：2018-04-22 00:07

本文选题：高电子迁移率晶体管 + 小信号建模　；参考：《华东师范大学》2016年博士论文

【摘要】：随着无线通信产业的爆炸性发展,作为第三代微波有源器件的氮化镓高电子迁移率晶体管(HEMT),无论是在工作频率方面、增益方面还是效率方面都有着巨大的优势,被广泛应用于射频微波集成电路的设计中。为了提高微波集成电路在设计与加工过程中的成功率、降低集成电路的设计成本以及缩短其加工周期,建立精确的高电子迁移率晶体管器件模型是必不可少的环节。本论文主要针对高电子迁移率晶体管的微波建模与参数提取技术进行了研究,取得的创新性研究成果如下：1)提出了一种提取HEMT器件小信号等效电路模型参数的新方法。该方法克服了传统小信号模型参数提取方法假设器件完全物理对称这一限制,利用在两种不同偏置条件下测量的HEMT器件S参数,推导了寄生参数与比例因子的关系,精确提取了HEMT器件的本征参数。在该新方法的基础上,研究了HEMT器件栅极宽度这一关键物理尺寸与小信号等效电路模型参数的关系；2)对考虑了分布效应的AlGaN/GaN HEMT器件小信号等效电路模型进行了研究,提出了一种使用半分析法提取小信号模型参数的方法。该方法将测试结构参数提取方法、反向截止条件参数提取方法与数值优化方法相结合,获得了符合物理意义的精确的小信号等效电路模型参数。在该方法的基础上,对HEMT器件本征参数的灵敏度进行了研究；3)提出了一种基于传统STATZ直流模型的AlGaN/GaN HEMT器件非线性直流模型。该模型考虑了漏极-源极电流和栅极-源极电压的非线性关系,该非线性关系分别使用多项式函数和指数函数来表征；在传统的二阶CURTICE模型的基础上,结合TOM III模型的优点提出了一种改进的CURTICE大信号模型,分别建立了AlGaN/GaN HEMT器件的电流模型和电容模型,并对微波商用软件中常用的大信号模型的精度进行了对比；4)对基于50Ω系统的噪声参数提取技术进行了研究,结合PUCEL噪声模型和POSPIESZALSKI噪声模型的优点,研究了栅极-漏极距离这一关键物理尺寸对AlGaN/GaN HEMT器件高频特性、噪声特性以及本征参数值的影响。最后使用建立的HEMT器件噪声等效电路模型设计了一款低噪声放大器并对HEMT器件测量环境进行了介绍。
[Abstract]:With the explosive development of wireless communication industry, gallium nitride high electron mobility transistor (Gallium nitride), as the third generation microwave active device, has great advantages in operating frequency, gain and efficiency. It is widely used in the design of RF microwave integrated circuit. In order to improve the success rate of microwave integrated circuit in the process of design and fabrication, reduce the design cost of integrated circuit and shorten its processing period, it is necessary to establish an accurate model of high electron mobility transistor device. In this paper, the microwave modeling and parameter extraction techniques of high electron mobility transistors are studied. The innovative research results are as follows: 1) A new method for extracting the parameters of small signal equivalent circuit model of HEMT devices is proposed. This method overcomes the limitation that the traditional small-signal model parameter extraction method assumes the complete physical symmetry of the device. Using the S parameters of HEMT device measured under two different bias conditions, the relationship between parasitic parameters and the scale factor is deduced. The intrinsic parameters of HEMT devices are extracted accurately. On the basis of the new method, the relationship between the key physical dimension of HEMT gate width and the parameters of small-signal equivalent circuit model is studied. (2) the small-signal equivalent circuit model of AlGaN/GaN HEMT device considering the distribution effect is studied. A method of extracting the parameters of small signal model by semi-analysis is presented in this paper. This method combines the test structure parameter extraction method, the reverse cut-off condition parameter extraction method and the numerical optimization method, and obtains the accurate small-signal equivalent circuit model parameters which accord with the physical meaning. Based on this method, the sensitivity of intrinsic parameters of HEMT devices is studied. (3) A nonlinear DC model of AlGaN/GaN HEMT devices based on traditional STATZ DC model is proposed. The nonlinear relationship between drain source current and gate source voltage is considered in this model, which is represented by polynomial function and exponential function respectively. Combining the advantages of TOM III model, an improved CURTICE large signal model is proposed. The current model and capacitance model of AlGaN/GaN HEMT device are established, respectively. The accuracy of the large signal model commonly used in commercial microwave software is compared. (4) the noise parameter extraction technology based on 50 惟 system is studied. The advantages of PUCEL noise model and POSPIESZALSKI noise model are combined. The effects of gate drain distance on the high frequency characteristics, noise characteristics and intrinsic parameters of AlGaN/GaN HEMT devices are studied. At last, a low noise amplifier is designed by using the noise equivalent circuit model of HEMT device and the measuring environment of HEMT device is introduced.
【学位授予单位】：华东师范大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN386

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