碲镉汞红外焦平面探测器芯片的优化设计及工艺验证

发布时间：2018-05-31 11:25

  本文选题：碲镉汞 + 红外探测器　； 参考：《中国科学院研究生院(上海技术物理研究所)》2016年博士论文

【摘要】：在高性能红外焦平面探测器快速发展的驱使下,新一代碲镉汞红外探测器不仅要实现新型探测器的结构设计与优化,还要发展新型探测器的特殊芯片工艺与集成技术。本文一方面采用Crosslight公司的半导体器件Apsys模拟软件,设计并优化了双色、陷光和硅(Si)基长波等新型碲镉汞红外探测器,另一方面研究了有利于碲镉汞红外探测器陡直图形芯片表面均匀覆盖的原子层沉积技术(ALD)和ALD钝化膜的表面与界面特性。1.新型碲镉汞红外探测器的结构设计与优化。进行了同时模式n~+-p_1-P_2-P_3-N~+碲镉汞MW/LW双色探测器芯片的结构设计,通过优化势垒层的组分与厚度等参数,获得了MW-LW和LW-MW光谱串音都小于2%的双色探测器结构;理论研究了集成陷光结构的碲镉汞n~+-on-p中波探测器,基于光敏元内垂直腔尺寸与分布的设计,陷光结构的探测器在不损失量子效率的前提下可实现暗电流的抑制;提出了一种p-on-N+异质结结构的Si基碲镉汞长波探测器,仿真结果表明该构形长波探测器不仅能抑制入射界面的光生载流子复合,显著提高响应波段的探测率,同时还能通过改变N+层组分实现器件起始波长的灵活调节和响应波段光谱区间的宽度控制。2.氧化铝(Al_2O_3)膜的ALD生长技术与钝化特性。利用ALD技术实现了碲镉汞红外探测器芯片表面Al_2O_3膜的65℃低温生长;Al_2O_3膜在碲镉汞红外探测器陡直图形芯片表面的膜厚均匀、覆盖致密;制备了Al_2O_3膜钝化的碲镉汞MIS器件和变面积光电二极管芯片;实验获得的Al_2O_3膜的介电常数约为7.0,表面复合速率、表面固定电荷密度以及慢界面态密度等界面特性与常规的CdTe/ZnS双层钝化膜相近;180℃高温退火处理提高了ALD-Al_2O_3膜的钝化效果,但在75℃/48h的烘烤后,MIS器件的C-V特性和变面积光电二极管芯片的R-V特性略有下降。3.硫化锌(ZnS)膜的ALD生长技术与钝化特性。利用ALD技术实现了碲镉汞红外探测器芯片表面ZnS膜的65℃低温生长;ZnS膜在碲镉汞红外探测器陡直图形芯片表面的膜厚均匀、覆盖致密;制备了ZnS膜钝化的碲镉汞MIS器件和变面积光电二极管芯片;实验获得的ZnS膜的介电常数约为6.0,表面固定电荷密度以及慢界面态密度等界面特性与常规的CdTe/ZnS双层钝化膜相近,而快界面态密度要高1个数量级;变面积光电二极管芯片的R-V特性也比常规的CdTe/ZnS双层钝化膜差约1个数量级;通过常规ZnS膜预覆盖的碲镉汞表面处理实验,初步确定了ALD-ZnS膜未能达到理想的钝化效果与碲镉汞/ZnS界面状态是直接相关的。
[Abstract]:Driven by the rapid development of high performance infrared focal plane detectors, the new generation of HgCdTe infrared detectors should not only realize the structural design and optimization of new detectors, but also develop the special chip technology and integrated technology of new type detectors. On the one hand, a new type of HgCdTe infrared detectors, such as two-color, trapping and Si-based long-wave detectors, are designed and optimized by using the semiconductor device Apsys software of Crosslight Company. On the other hand, the surface and interface characteristics of ALD passivated film and ALD (atomic layer deposition technique) which are favorable to uniform surface coverage of HgCdTe infrared detector are studied. Structure Design and Optimization of a New HgCdTe Infrared detector. The structure design of the MW/LW dual-color detector chip with simultaneous mode n-psp 1-P2-P2-P3-N- HgCdTe has been carried out. By optimizing the composition and thickness of the barrier layer, a dual-color detector structure with MW-LW and LW-MW spectral crosstalk less than 2% has been obtained. Based on the design of vertical cavity size and distribution in Guang Min element, the trapped structure detector can suppress the dark current without losing quantum efficiency. A Si-based HgCdTe long wave detector with p-on-N heterojunction structure is proposed. The simulation results show that the configuration can not only suppress the photogenerated carrier recombination at the incident interface, but also improve the detectability of the response band. At the same time, we can adjust the starting wavelength of the device flexibly and control the width of the spectral region of the response band by changing the N layer component. ALD growth and passivation characteristics of Al _ 2O _ 3 / Al _ 2O _ 3 films. The ALD technique was used to realize the low temperature growth of Al_2O_3 film at 65 鈩，

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