基于表面等离子干涉原理的周期减小光刻技术研究

发布时间：2018-07-03 11:25

本文选题：表面等离子干涉 + 周期减小光刻　；参考：《哈尔滨工业大学》2016年博士论文

【摘要】：随着微纳米加工技术和纳米光学技术的发展,加工周期性光学结构的方法在向着高精度、高分辨率和低成本的方向发展。其中,基于表面等离子干涉原理的微纳米加工技术发展迅速,拥有很大的应用潜力。运用该原理实现大面积、高深度、周期减小的光刻技术和加工工艺意义重大,是制造纳米级特征尺寸光学元件领域的热点和难点。本课题“基于表面等离子干涉原理的周期减小光刻技术研究”,对该技术领域存在的主要技术问题与科学问题进行了深入地理论分析、仿真模拟和实验验证。主要完成的工作如下:1.针对传统等离子干涉光刻时由于入射波与干涉波的重叠,无法实现周期减小光刻的问题,设计了一种基于双曲线超材料结构与表面等离子干涉效应的光刻方法。该方法利用双曲线超材料结构对透过光栅掩膜板的波段进行频率选择,屏蔽掉入射波对光刻图案的影响,从而实现周期减小光刻。根据该方法,设计含有铝-氧化铝双曲线超材料结构和700nm周期铝光栅的掩膜板,搭建曝光平台。利用405nm波长的UV激光光源对涂覆在弹性基底上的光刻胶进行曝光,得到了周期350nm(掩膜板周期1/2)、线宽100nm、区域面积15mm×15mm的均匀光栅图案。实验表明:使用该结构进行光刻不需要EUV光源和减震平台,利用普通UV光源就可以制作大面积的亚波长周期的光栅。2.为了提高基于等离子干涉原理的周期减小光刻的生产效率,优化超材料结构,提出了一种用近零折射率(ENZ)超材料多层膜结构与表面等离子干涉相结合的方法。通过对金属-非金属构成的多层膜在UV波段产生ENZ超材料特性和等离子干涉波在ENZ超材料中的传播进行分析,提出针对不同曝光波长和光栅掩膜周期实现周期减小光刻的优化设计方法;设计了SPP干涉激发结构,通过有限元仿真,分析了隔离层的厚度对干涉波的共振强度和波长的影响;计算得到掩膜板光栅周期与SPP干涉波周期的匹配条件,利用该方法可以实现1/n倍(n为偶数)掩膜板光栅周期的周期减小光刻;对多层膜拥有超材料特性所需层数的极限条件进行分析;计算入射光激发的表面等离子干涉波在垂直方向的波矢,根据波矢调节ENZ多层膜结构的透射波段实现频率选择;对构成ENZ双曲线超材料的条件进行了分析,给出了适合光刻结构的多层膜材料组合;对220nm周期的铝光栅掩膜和405nm波长的UV光源,通过建立的优化理论设计光刻结构,得到周期为掩膜板周期1/2(110nm)的光栅图案。3.设计了一种可以在高空间频率下得到超大曝光深度图案的等离子光刻方法,克服了传统等离子光刻中,由于表面等离子波离开金属表面后成指数衰减所导致的光刻图案浅的缺点。该结构利用了光栅的一阶衍射、表面等离子干涉和多层波导叠加的复合作用:利用空间频率选择原理设计光栅和多层波导,从而实现带通滤波的功能,只将金属光栅激发的一阶衍射光引入波导中,并在波导结构中产生谐振,使原本传播距离很短的倏逝波增强为传递波,实现周期减小的超大曝光深度光刻。由于受到一阶衍射光的限制,该方法只能产生1/2掩膜板周期的图案。使用周期为245nm的铝光栅掩膜板进行光刻实验,曝光显影后得到了周期122.5nm(掩膜板周期的1/2)、线宽55nm、深度超过100nm的均匀光栅图案。理论分析与实验结果证实了该方法可以实现大面积、高深度和周期减小的亚波长光刻。
[Abstract]:With the development of micro nano processing technology and nano optical technology, the method of machining periodic optical structure is developing in the direction of high precision, high resolution and low cost. Among them, the micro nano machining technology based on the principle of surface plasma interferometry has rapid development and has great application potential. The application of this principle to large area and high depth is realized by this principle. Photolithography and processing technology with periodic reduction are of great significance. It is a hot and difficult point in the field of manufacturing nanoscale feature size optical components. This topic is "the study of photolithography based on the principle of surface plasma interference". The main technical and scientific problems in this field are theoretically analyzed. True simulation and experimental verification. The main work is as follows: 1. for traditional plasma interference photolithography, due to the overlap of the incident wave and interference wave, it is impossible to achieve periodic reduction of photolithography. A photoetching method based on hyperbolic hyperbolic structure and surface plasma interference is designed. This method uses hyperbolic hypermaterial structure. The frequency selection of the band through the grating mask plate is selected, and the shielding fall into the impact of the photolithography on the photolithography pattern is shielded, thereby reducing the photolithography. According to this method, a mask plate containing aluminum alumina hyperbolic hyperbolic structure and 700nm periodic aluminum grating is designed, and an exposure platform is built. The 405nm wavelength UV laser light source is used to cover the elasticity. The photoresist on the substrate is exposed, and the uniform grating pattern of the periodic 350nm (the mask plate period 1/2), the line width 100nm and the area area of 15mm x 15mm is obtained. The experiment shows that the use of this structure does not require the EUV light source and the shock absorption platform, and the large area of the sub wavelength period grating.2. can be made by using the ordinary UV light source to improve the basis. The plasma interference principle reduces the production efficiency of photolithography and optimizes the structure of the supermaterial. A method of combining the near zero refractive index (ENZ) supermaterial multilayer structure with the surface plasma interference is proposed. The properties of the ENZ supermaterial in the UV band and the plasma interference wave in the ENZ supermaterial are produced by the multilayer film made of metal and nonmetal. An optimization design method for reducing photolithography for different exposure wavelengths and raster mask cycles is proposed. The SPP interference excitation structure is designed. The influence of the thickness of the isolation layer on the resonance intensity and wavelength of the interference wave is analyzed by the finite element simulation. The period of the mask grating and the interference wave cycle of the SPP are calculated. With this method, the photolithography of the period of 1/n times (an even number of n) masks can be realized by this method, and the limit conditions for the number of layers required for the properties of the supermaterial are analyzed. The wave vector in the vertical direction of the surface plasma interference wave excited by the incident light is calculated and the transmission of the structure of the ENZ multilayer film is adjusted according to the wave vector. The frequency selection is realized in the band. The condition of ENZ hyperbolic hypermaterial is analyzed, and the multilayer film material suitable for the photolithography structure is given. The aluminum grating mask and the UV light source of the 405nm wavelength for the 220nm cycle are designed. The structure of the photolithography is designed by the established optimization theory, and the grating pattern.3. of the cycle period is the 1/2 (110Nm) of the mask plate period. A plasma photolithography method, which can be obtained at high spatial frequencies at high spatial frequencies, has been proposed to overcome the shortcomings of the traditional plasma lithography, due to the exponential decay of the surface plasma waves leaving the metal surface. The structure uses the first order diffraction of the grating, the surface plasma interference and the multilayer wave. The composite effect of guide superposition: using the principle of spatial frequency selection to design the grating and the multilayer waveguide, thus realizing the function of bandpass filtering, only the first order diffraction light excited by the metal grating is introduced into the waveguide, and the resonance is produced in the waveguide structure, which makes the evanescent wave which has the short propagation distance to be the transfer wave, so as to realize the ultra large aeration of the period decreasing. Optical depth photolithography. Due to the limitation of the first order diffraction light, this method can only produce the pattern of the 1/2 mask cycle. Using the aluminum grating mask plate with a period of 245nm, the photolithography experiment is carried out. After exposure development, the period 122.5nm (the 1/2 of the mask plate period), the line width 55nm, the depth over 100nm uniform grating pattern are obtained. The results confirm that this method can achieve large area, high depth and periodic subwavelength lithography.
【学位授予单位】：哈尔滨工业大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN305.7

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