涡腔倒角结构对涡流二极管性能影响的数值模拟

发布时间：2018-06-26 09:25

  本文选题：涡流二极管 + 涡腔　； 参考：《核技术》2015年01期

【摘要】：为了探讨涡流二极管涡腔倒角对其流动性能的影响规律,利用计算流体力学方法(Computational Fluid Dynamics,CFD)对4种具有不同高度涡腔倒角的涡流二极管进行了正反向流动的数值模拟,正向流动采用标准k-ε湍流模型,反向流动采用RNG(Renormalization Group)k-ε湍流模型。结果表明,相较于标准结构,其余三种高度的涡腔倒角在较高雷诺数下都可以降低正向流动阻力,但同时也会降低反向流动阻力。其中,高度为3/4涡腔高度的倒角结构,可以最大程度地降低正向流动阻力,同时对反向流动阻力的影响最小,对涡流二极管性能的提高效果最为显著。数值模拟所得结论可为涡流二极管的优化设计提供参考依据。
[Abstract]:In order to investigate the effect of vortex cavity chamfering on the flow performance of eddy diodes, four kinds of vortex diodes with different height chamfering were numerically simulated by computational fluid dynamics (CFD). The standard k- 蔚 turbulence model is used for forward flow and RNG (renormalization Group) k- 蔚 turbulence model for reverse flow. The results show that compared with the standard structure, the chamfer of the other three kinds of height can reduce the forward flow resistance at higher Reynolds number, but also the reverse flow resistance at the same time. The chamfer structure with a height of 3 / 4 of the cavity height can reduce the forward flow resistance to the greatest extent, and the effect on the reverse flow resistance is the least, and the effect on the performance of the eddy current diode is the most significant. The results obtained by numerical simulation can provide a reference for the optimal design of eddy current diodes.
【作者单位】： 中国科学院上海应用物理研究所;中国科学院大学;
【基金】：中国科学院战略性先导科技专项(No.XDA02050100) 上海市科研计划项目(No.14ZR1448400)资助
【分类号】：TL364
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本文编号：2069915