低温等离子体接枝改性聚四氟乙烯薄膜表面无钯化学镀铜

发布时间：2018-01-02 18:20

本文关键词：低温等离子体接枝改性聚四氟乙烯薄膜表面无钯化学镀铜　出处：《辐射研究与辐射工艺学报》2016年04期 　论文类型：期刊论文

【摘要】：通过低温等离子体接枝改性方法将丙烯酸(Acrylic acid,AAc)接枝聚合于聚四氟乙烯(Polytetrafluoroethylene,PTFE)薄膜表面,随后进行无钯化学镀铜,制备出表面镀铜的PTFE薄膜(PTFE-g-PAAc-Cu)。衰减全反射傅里叶变换红外光谱(ATR-FTIR)测试结果表明,丙烯酸成功地接枝于PTFE薄膜表面;通过扫描电镜(Scanning electron microscopy,SEM)和原子力显微镜(Atomic force microscopy,AFM)观察发现,镀铜均匀沉积于PTFE薄膜表面;3M胶带粘贴方法(ASTM D3359标准)评估结果表明,铜层与PTFE薄膜粘结牢固,3M胶带未能够将铜层与PTFE薄膜分离开;电性能测试结果表明,PTFE-g-PAAc-Cu的表面电阻(Rs)降至1.27′10~(-2)Ω/sq,电阻率降至50.1μΩ?cm,其导电性由绝缘体提高到导体水平(导体的电阻率范围为1~10~3μΩ?cm),有望在柔性覆铜板领域获得应用。
[Abstract]:Acrylic acid was modified by low temperature plasma grafting. Ac-grafted polytetrafluoroethylene( PTFEE) films were grafted onto the surface of PTFEs, and then electroless copper plating was carried out without palladium. PTFE-g-PAAc-CuN thin films were prepared by copper plating on the surface. The results of attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) show that PTFE-g-PAAc-CuO thin films are deposited on the surface. Acrylic acid was successfully grafted onto the surface of PTFE film. Scanning electron microscopy was used. SEM) and Atomic force microscopy AFM (Atomic Force microscope) show that copper plating is uniformly deposited on the surface of PTFE thin films. The results of 3M tape bonding method and ASTM D3359 standard show that the adhesive bond between copper layer and PTFE film can not separate copper layer from PTFE film. The electrical properties of PTFE-g-PAAc-Cu show that the surface resistance of PTFE-g-PAAc-Cu decreases to 1.2710 / 2) 惟 / sqand the resistivity decreases to 50.1 渭惟? Cm, the conductivity of the conductor is improved from insulator to conductor level (resistivity range of conductor is 11010? 3 渭惟? CMU is expected to be used in flexible copper clad laminate.
【作者单位】：中国科学院上海应用物理研究所嘉定园区;中国科学院大学;上海科技大学物质科学与技术学院;
【基金】：国家自然科学基金(11275252)资助~~
【分类号】：TB383.2
【正文快照】： 随着电子技术的高速发展,高性能柔性覆铜板的需求增长趋势显著。聚四氟乙烯(Polytetrafluoroethylene,PTFE)薄膜具有化学稳定性[1]、电绝缘性、热稳定性等优异的性能,通过表面化学镀铜的方法所制备成的柔性PTFE覆铜板介电常数低、介质损耗因子小,是理想的高频微波介电材料,可

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