一维半导体纳米结构可控制备及其光电探测器的研究

发布时间：2018-01-04 13:09

本文关键词：一维半导体纳米结构可控制备及其光电探测器的研究　出处：《苏州大学》2015年硕士论文　论文类型：学位论文

【摘要】：一维半导体纳米线具有独特的光电特性、柔性和易于集成等特点,因此吸引了科学家们广泛的关注。然而,制备出基于一维纳米线的高性能光电探测器仍然面临着许多困难。本文利用气相沉积法制备了高质量的单晶纳米线,并且制备出了基于有机纳米线阵列或无机核/壳纳米线的高性能光电探测器。主要研究结果如下:一、首先用金纳米颗粒在Si衬底上修饰不同的纳米金图案,然后在此衬底上制备出了高密度、大面积、均匀且交叉站立的图案化PTCDA纳米线。以沉积有电极对图案的Si/SiO2为衬底实现了纳米线在电极上的选择性生长,其中纳米线在器件沟道上方交叉接触。这种一步法构筑的基于PTCDA纳米线的光电探测器具有很好的器件性能如很高的灵敏度、很快的响应速度以及在400~800 nm的宽光带区都有响应特性等。有机PTCDA纳米线阵列在光电探测器上的成功应用揭示了有机纳米线在小型化、柔性化和集成化的光电探测器上具有很大的应用前景。二、基于气相-液相-固相机制,以金颗粒作为催化剂在管式炉里成功的制备出了高密度的Ge纳米线。通过原子层气相沉积(ALD)技术在Ge纳米线表面上直接沉积一层CdS薄膜壳层制备出了Ge/CdS核/壳纳米线。经过光刻技术去除Ge/CdS核/壳纳米线表面的部分CdS薄膜壳层以及经过电极沉积后制备出了基于Ge/CdS核/壳纳米线异质结型的光电探测器。在0 V以及-5 V的偏压下,Ge/CdS核/壳纳米线异质结光电探测器具有较高的开关比、很快的响应速度以及在可见-近红外的光电响应性能。基于Ge/CdS核/壳纳米线异质结光电探测器的优异性能,预示着核/壳纳米线异质结在快速响应和高响应度的光电探测器上有着巨大的应用潜力。
[Abstract]:One-dimensional semiconductor nanowires have attracted wide attention due to their unique optoelectronic properties, flexibility and ease of integration. The preparation of high performance photodetectors based on one-dimensional nanowires still faces many difficulties. In this paper, high quality single crystal nanowires are prepared by vapor deposition. High performance photodetectors based on organic nanowire arrays or inorganic core / shell nanowires have been prepared. The main results are as follows: firstly, gold nanoparticles are used to modify different nanocrystalline gold patterns on Si substrate. Then high density and large area were prepared on the substrate. Uniform and cross-standing patterned PTCDA nanowires. The selective growth of nanowires on the electrode was realized by depositing Si/SiO2 with electrodes on the substrate. Among them nanowires cross contact above the channel of the device. This one-step photodetector based on PTCDA nanowires has good device performance such as high sensitivity. The rapid response speed and the response characteristics in the 400-nm wide optical band region. The successful application of the organic PTCDA nanowire array in photodetectors reveals the miniaturization of the organic nanowires. Flexible and integrated photodetectors have great application prospects. Second, based on the gas-liquid-solid mechanism. High density GE nanowires were successfully prepared using gold particles as catalyst in a tube furnace. ALD was deposited by atomic layer vapor deposition. Ge/CdS core / shell nanowires were prepared by direct deposition of a layer of CdS thin film shell on GE nanowires by photolithography. Some CdS thin films on the surface of Ge/CdS core / shell nanowires were removed by photolithography. Photodetectors based on Ge/CdS core / shell nanowires heterojunction were fabricated by coating and electrode deposition. V and -5 V bias. The Ge/CdS core / shell nanowire heterojunction photodetectors have high switching ratio. Fast response speed and optoelectronic response performance in visible-near infrared. Excellent performance based on Ge/CdS core / shell nanowire heterojunction photodetectors. It indicates that the core / shell nanowire heterostructures have great application potential in fast response and high responsivity photodetectors.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1

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