多层结构紫外透明导电薄膜的制备及性能研究

发布时间：2018-01-04 15:40

本文关键词：多层结构紫外透明导电薄膜的制备及性能研究　出处：《大连理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：透明导电氧化物薄膜具有较高的可见光透过率及良好的导电性,因而广泛应用于传感器、平板显示器、太阳能电池等领域。目前,应用较多的是铟锡氧化物薄膜(ITO)及氧化锌(ZnO)薄膜,这是由于ITO薄膜透过率高、电阻率低、功函数高；ZnO薄膜价格便宜,沉积温度相对较低和在氢气气氛下具有更好的稳定性等优点。但是,传统透明导电薄膜由于带隙宽度的限制,其难以透过波长小于350nm的紫外光。同时,材料的禁带宽度越大,将其掺杂成为导电材料的困难也越大,所以具有优良导电特性的单层深紫外透明导电薄膜也较难制备。近年来,金属材料与宽禁带半导体材料所组成的“三明治型”多层结构获得了广泛关注,成为紫外透明导电薄膜研究领域的新热点。本论文综合论述了透明导电薄膜的研究进展及应用前景,利用磁控溅射技术制备了Ag薄膜、镓砷氧化物薄膜以及二者构成的多层结构紫外透明导电薄膜。通过调整Ag薄膜与镓砷氧化物薄膜的厚度,以及对Ag膜进行退火处理,采用X射线衍射仪、金相显微镜、紫外-可见分光光度计、霍尔测试仪对Ag薄膜、镓砷氧化物薄膜以及多层结构的各方面性质进行了分析和讨论。主要工作如下：1.Ag薄膜的制备与优化。实验采用射频磁控溅射技术制备了不同厚度的Ag薄膜,研究了厚度对Ag薄膜结构形貌及光电性质的影响,确定最佳的厚度参数。此外还研究了退火处理对Ag薄膜光学和电学特性的影响。2.镓砷氧化物的制备与优化。采用射频磁控溅射技术在c面蓝宝石衬底上制备了不同厚度的镓砷氧化物薄膜,研究了厚度对薄膜光电性质的影响,确定性能最优的厚度参数。3.镓砷氧化物-Ag-镓砷氧化物多层结构紫外透明导电膜的制备与表征。结合前面的研究结果,利用优化参数制各了镓砷氧化物-Ag-镓砷氧化物多层结构,并分析了多层膜的光电性质。此外还研究了Ag层退火对多层结构的光学和电学特性的影响。实验结果表明：溅射生长的Ag薄膜具有(111)取向；单层Ag膜为12nm时,薄膜兼具良好的透过性和导电性,退火后Ag膜晶粒稍有变大,其光电性质略有提高。实验中所制备的单层镓砷氧化物薄膜均呈现出高阻特性,当单层镓砷氧化物薄膜的厚度为32.5nm时,在可见和紫外光区具有良好的透过性。基于优化参数制备的多层薄膜在310-350nm波段范围内的平均透射率在50%以上,电阻率为2.79Ω/□,具备良好的紫外透明导电特性。
[Abstract]:Transparent conductive oxide thin films with high visible light transmittance and good conductivity rate, so it is widely used in sensors, flat panel display, solar cells and other fields. At present, the application is more indium tin oxide film (ITO) and Zinc Oxide (ZnO) film, this is because the ITO film has high transmittance, low resistivity, power the function of ZnO film high; the price is cheap, relatively low deposition temperature and has better stability in hydrogen atmosphere. However, the traditional transparent conductive film because of the band gap width restrictions, it is difficult to through the ultraviolet wavelength is less than 350nm. At the same time, the bandgap is larger, the doping of conductive materials become difficult the greater the monolayer, so with excellent electrical properties of deep ultraviolet transparent conductive film is difficult to prepare. In recent years, metal materials with wide bandgap semiconductor material which is composed of "sandwich" multilayer The structure has gained widespread attention, has become the new focus of UV transparent conducting thin film research field. This paper discussed the transparent conductive film advances in research and application, Ag films were prepared by magnetron sputtering technique, a multilayer gallium arsenic oxide film and the two node transparent conductive thin film structure by adjusting the Ag UV. Thin film with gallium arsenic oxide film thickness, and the Ag film was annealed by X ray diffraction, optical microscope, UV VIS spectrophotometer, Holzer tester of Ag film, gallium arsenic oxide film and the properties of the multilayer structure are analyzed and discussed. The main work is as follows: preparation and optimization of 1.Ag thin films by RF magnetron sputtering technique. The experiment system of Ag thin films with different thickness were prepared. The effects of the thickness of the Ag thin film structure and photoelectric properties, determine the optimum thickness of ginseng The number. In addition, the effects of annealing treatment on the optical and electrical properties of Ag thin films.2. gallium arsenic oxide preparation and optimization. In the C plane sapphire substrates, a gallium arsenic oxide thin films with different thickness were prepared by radio-frequency magnetron sputtering technique, studied the effect of thickness of thin film photoelectric properties, optimal thickness the parameters of.3. -Ag- oxide gallium arsenide gallium arsenic oxide multilayer structure UV transparent conductive film preparation and characterization. Combined with previous research results, using optimization parameters for the gallium arsenide gallium arsenic oxide -Ag- oxide multilayer structure, and analyzes the photoelectric properties of multilayer films. In addition effect of optical and electrical properties of Ag layers of multilayer annealing the structure is also studied. The experimental results show that Ag thin films grown with the (111) orientation; monolayer Ag films 12NM films, both permeability and good conductivity, annealed Ag film grain Slightly larger, the photoelectric properties increased slightly. The single gallium arsenic oxide thin films prepared in the experiment showed high resistance characteristics, when the single gallium oxide thin film thickness is 32.5nm, in the visible and ultraviolet region has good permeability. The optimization parameters of preparation of multilayer films in the wavelength range 310-350nm the average transmittance of above 50% based on the resistivity of 2.79 ohm / square transparent conductive properties have good ultraviolet.

【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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