金属催化化学腐蚀法制备硅纳米线的研究

发布时间：2018-01-07 17:01

本文关键词：金属催化化学腐蚀法制备硅纳米线的研究　出处：《郑州大学》2015年硕士论文　论文类型：学位论文

【摘要】：随着电子信息时代的到来,与传统电子技术相比,以集成电路为基础的微电子技术实现了器件与电路的微小型化而逐渐成为当今信息产业的基石。但是,随着研究的进展,研究者们发现由于受经典物理学理论的限制,使得依靠传统微电子技术来减小电子器件尺寸越来越难,但摩尔定律使得科学工作者们可以在工艺与电子器件发展之间的矛盾中寻求新的工艺手段和材料,而一维半导体材料因其显著特性引起了学者们的广泛关注。硅纳米线因在两个维度上都达到纳米尺寸且在光学、光电子学领域都有巨大应用潜力而成为引起广泛研究的一维半导体材料。而其中对硅纳米线的制备技术的研究则是研究硅纳米线性能的基础。本文采用金属催化化学腐蚀法制备硅纳米线,这种方法制备过程简单且成本低廉。并且在实验过程中通过改变一次腐蚀的腐蚀液浓度、腐蚀时间、腐蚀温度及改变二次刻蚀时间来比较这些因素对制备的硅纳米线的表面形貌的影响。实验发现在刻蚀过程中刻蚀时间对样品形貌影响巨大,刻蚀时间短样品无法生成硅纳米线,而刻蚀时间过长时则会导致硅片被刻蚀透,最后溶解在刻蚀液中。而本文尝试通过其他实验方法制备硅纳米线比如通过二次刻蚀前对样品进行退火处理来改善硅纳米线的形貌和光致发光特性。在其他实验中生成有网格状样品,刻蚀时间延长网格状结构逐渐消失,但是其具体行成机制及消失原因尚待研究。研究发现实验中制备的硅纳米线的生长方向只受表面银层的影响,且形成中间银层两端硅纳米线的特殊形貌。
[Abstract]:With the advent of electronic information age, compared with the traditional electronic technology, microelectronic technology with integrated circuit based on the realization of miniaturization of device and circuit and gradually become the cornerstone of today's information industry. However, with the progress of the study, the researchers found that due to the limitation of classical physics theory, which rely on traditional microelectronics technology to reduce the size of electronic devices is more and more difficult, seek new technology and material contradiction but Moore's law makes scientists in between the development process and electronic devices, and one-dimensional semiconductor material due to its excellent properties have attracted wide attention. Silicon nanowires due to nano size in two dimensions and in optics, optoelectronics fields have great application potential as one-dimensional semiconductor materials widely studied. One of the silicon nanowire preparation technology The study is based on the properties of SiNWs. The preparation of silicon nanowires by metal catalyzed chemical etching method, this method has the advantages of simple preparation process and low cost. And by changing a corrosion solution concentration, during the experiment of corrosion time, corrosion temperature and etching time two times change in surface topography to comparison of these factors on the preparation of silicon nanowires. The experimental results showed that the etching time in the etching process is a huge impact on the morphology of the samples, the etching time of short sample cannot generate silicon nanowires, and the etching time will lead to the silicon wafer is etched through, finally dissolved in the etching solution. And this paper attempts by other experiments preparation method of silicon nanowires by two etching samples before annealing to improve the morphology of silicon nanowires and photoluminescence properties. In other experiments to generate a grid sample, The etching time prolongs, and the grid structure gradually disappears. However, the specific mechanism and the reason for its disappearance remain to be studied. It is found that the growth direction of the prepared silicon nanowires is only affected by the surface silver layer, and the special morphology of the silicon nanowires at the ends of the intermediate Silver layer is formed.

【学位授予单位】：郑州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;O613.72

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