FTO上溅射ITO薄膜及光电性能

发布时间：2018-01-19 03:20

  本文关键词： 脉冲磁控溅射 透明导电薄膜 氧化铟锡薄膜　出处：《大连工业大学学报》2017年04期 　论文类型：期刊论文

【摘要】：通过脉冲磁控溅射法在掺氟氧化锡透明导电薄膜(FTO)基底上制备了氧化铟锡(ITO)透明导电薄膜。研究了溅射时间和衬底温度对FTO基底上制备的ITO薄膜的光透过率和电性能的影响。采用SZT-2四探针测试仪测量样品表面的电阻,用扫描电镜(SEM)对样品进行表征。结果表明,随着溅射时间的增加以及衬底温度的升高,以FTO导电薄膜为基底制备的氧化铟锡(ITO)透明导电膜的电阻逐渐减小,而后基本保持不变。在基片温度为400℃、溅射时间为45min时,方块电阻最小值达到1.5Ω。
[Abstract]:Indium tin oxide (ITO) was prepared by pulsed magnetron sputtering on the substrate of transparent conductive thin film (FTO) doped with tin oxide. Transparent conductive thin films. The effects of sputtering time and substrate temperature on the optical transmittance and electrical properties of ITO films prepared on FTO substrates were investigated. The surface resistance of the samples was measured by SZT-2 four-probe tester. The samples were characterized by scanning electron microscopy (SEM). The results show that the substrate temperature increases with the increase of sputtering time. The resistance of indium tin oxide (ITO) transparent conductive films prepared on FTO thin films decreased gradually, and then remained unchanged. The substrate temperature was 400 鈩，

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