低浓度氩气对金刚石薄膜的影响及机理研究

发布时间：2018-01-20 17:11

本文关键词： 热丝化学气相沉积金刚石薄膜生长速率光谱诊断　出处：《真空科学与技术学报》2017年03期 　论文类型：期刊论文

【摘要】：提高生长速率是降低金刚石薄膜应用成本的关键因素之一,目前研究的提高速率的方法中以偏压电子增强为主,而该方法不适宜表面复杂的刀具涂层。本文通过在无偏压热丝化学气相沉积沉积金刚石薄膜条件下添加少量的Ar,成功将生长速率提高3倍,并采用等离子发射光谱研究了其反应机制,尤其对反应系统电子温度的变化做出了详细推理分析。实验结果采用扫描电镜、Raman光谱进行表征。结果表明:氩气的添加不仅可促进二次成核,使得晶粒尺寸达到纳米级,而且一定量的氩气(8%~32%)可提高金刚石薄膜的生长速率,当氩气含量在8%~32%范围内时,金刚石薄膜的生长速率随氩气浓度增大而增大,本实验获得最高生长速率达3.75μm/h,是无Ar情况下的3倍。光谱诊断显示的主要基团为CO(283~370nm),CH(387.0 nm),H_β(486 nm),H_α(656.3 nm),氩气添加后这些基团的光谱强度均显著增强。当氩气含量为7%~30%时,电子温度与氩气浓度成正比,为金刚石薄膜的生长提供了更优越的条件,生长速率得到提高。
[Abstract]:Increasing the growth rate is one of the key factors to reduce the application cost of diamond films, the present research methods to improve the speed of electronic bias mainly enhancement and the method is not suitable for the cutting tool coating surface complex. Through adding a small amount of Ar without bias HFCVD Diamond film deposition conditions, the growth rate will be successful increased 3 times, and the plasma emission spectra of the reaction mechanism, especially for electronic temperature reaction system changes made detailed reasoning and analysis. The experimental results by scanning electron microscopy, Raman spectra were characterized. The results showed that the addition of argon gas can not only promote the two times of nucleation, the grain size reaches the nanometer level, and some the amount of argon (8%~32%) can improve the growth rate of diamond films, when the argon content in the range of 8%~32%, the growth rate of diamond film with argon gas concentration increased Large increases in this experiment, the highest growth rate of up to 3.75 m/h, 3 times Ar cases. The main groups of spectrum diagnosis of displaying the CO (283~370nm), CH (387 nm), H_ beta (486 nm), H_ (656.3 nm), after adding argon spectral intensity of these groups were significantly enhanced. When the argon content is 7%~30%, and the electron temperature is proportional to the concentration of argon, provide more favorable conditions for the growth of diamond films, the growth rate increased.

【作者单位】：武汉工程大学材料科学与工程学院等离子体化学新材料湖北省重点实验室;
【基金】：国家自然科学基金(批准号:11575134)的资助
【分类号】：TQ163;TB383.2
【正文快照】： 在过去的十年时间里,研究者就化学气相沉积(CVD)金刚石的生长速率做了大量的研究工作,但突破主要是在单晶的生长方面,Yan等[1]的研究报道显示首次将单晶的生长速率提高到了150μm/h,对于多晶金刚石薄膜的生长速率的研究大致还是停留在电子增强的时代。通过偏压或者射频确实可

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