衬底温度调制生长GZO薄膜的性能研究

发布时间：2018-01-29 04:23

  本文关键词： 射频磁控溅射 GZO薄膜 衬底温度调制 光电性能　出处：《中国陶瓷》2017年01期 　论文类型：期刊论文

【摘要】：利用射频磁控溅射法在石英玻璃衬底上制备ZnO∶Ga透明导电氧化物薄膜,主要研究了一种类调制掺杂工艺对GZO薄膜的薄膜形貌结构和光电性能的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见-近红外分光光度计(UV-VIS-NIR)和四探针测试仪对GZO薄膜进行表征。结果表明:不同的衬底温度调制下生长的GZO薄膜都具有明显的c轴择优取向,对于衬底温度调制条件下,在150℃/RT条件下的薄膜结晶最好,且在可见近红外波段(480~1600 nm)平均透过率达到85.4%左右,薄膜最低方阻达到60Ω/□。
[Abstract]:ZnO:Ga transparent conductive oxide thin films were prepared on quartz glass substrates by RF magnetron sputtering. The influence of a kind of modulation doping process on the morphology and optoelectronic properties of GZO thin films was studied by means of X-ray diffractometer (XRD) and scanning electron microscopy (SEM). UV-VIS-NIR spectrophotometer. The results show that the GZO films grown under different substrate temperature modulation have obvious c-axis preferred orientation. For substrate temperature modulation, the film crystallized best at 150 鈩，

本文编号：1472512