化学溶液法沉积制备金属基带上的氧化物阻挡层薄膜研究

发布时间：2018-01-30 14:57

本文关键词： 溶液沉积表面平坦化非晶Y2O3薄膜 Y-Al-O薄膜多层超导层带材　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：第二代YBa2Cu3O7-x高温超导带材在超导输电线缆,超导磁体,超导电动机等领域的应用前景十分广泛。本论文使用化学溶液沉积表面平坦化(SDP)方式在金属基带上沉积非晶氧化物阻挡层薄膜,使基带表面符合离子束辅助沉积(IBAD)技术制备YBCO带材技术路线的要求,并自主设计出全套溶液沉积表面平坦化处理设备。同时,在YBCO薄膜表面使用金属有机溶液沉积法(MOD)制备出不影响YBCO薄膜超导性能的缓冲层,对含有多层超导层带材的可行性进行了探索。具体研究工作如下所述:1、研究了溶液沉积表面平坦化方式在哈氏合剂基带表面制备非晶Y2O3薄膜工艺中浸渍提拉速度、快速热处理温度和薄膜沉积层数对制备薄膜性能参数的影响,并研究了非晶Y2O3薄膜具体的结晶过程,制备出在5μm×5μm范围内表面均方根粗糙度小于0.5 nm的非晶Y2O3薄膜。2、Y-Al-O薄膜的结晶温度高于Y2O3薄膜,经后续工艺高温热处理过程后表面粗糙度变化较小,有利于制备高性能的带材。详细研究了溶液沉积表面平坦化方式在哈氏合金基带表面制备Y-Al-O薄膜工艺中薄膜沉积层数、快速热处理温度、浸渍提拉速度和前驱液中金属离子比例对Y-Al-O薄膜性能参数影响,制备出在5μm×5μm范围内表面均方根粗糙度1 nm的Y-Al-O薄膜。3、解决了长带材沉积SDP薄膜过程中基带边缘薄膜开裂的问题,成功制备出长度达28 m,两面一致性良好,表面均方根粗糙度5μm×5μm范围内基本低于2 nm的SDP带材,并在所制备的SDP带材上沉积出面外半高宽Δω=3.64°,面内半高宽Δφ=5.15°的IBAD-MgO薄膜和临界电流密度最高达2 MA/cm2的YBCO超导薄膜。4、研究了快速热处理时间对YBCO薄膜表面MOD法制备Y2O3薄膜的影响,制备出面外半高宽Δω=4.38°,面内半高宽Δφ=4.61°的Y2O3薄膜。研究了高温热处理温度对YBCO薄膜表面制备CeO2薄膜的影响,沉积出面外半高宽Δω=16.12°,面内半高宽Δφ=5.02°的CeO2薄膜。经充氧退火后制备有CeO2薄膜的YBCO薄膜超导性能无明显降低。
[Abstract]:The second generation of YBa2Cu3O7-x HTS tapes are used in superconducting transmission cables and superconducting magnets. The application prospect of superconducting motor is very wide. In this thesis, amorphous oxide barrier films are deposited on metal subband by chemical solution deposition. The substrate surface meets the requirements of ion beam assisted deposition (IBAD) technology for the preparation of YBCO strip, and a complete set of solution deposition surface flattening treatment equipment is designed independently. At the same time, a complete set of solution deposition surface flattening treatment equipment is designed. A buffer layer without affecting the superconducting properties of YBCO thin films was prepared by metal-organic solution deposition method on the surface of YBCO films. The feasibility of multilayer superconducting tape is explored. The specific research work is as follows: 1. The effects of impregnation and drawing speed, rapid heat treatment temperature and the number of deposited layers on the properties of amorphous Y _ 2O _ 3 films prepared on the substrate of Hacharix were studied. The crystallization process of amorphous Y _ 2O _ 3 thin films was studied. The amorphous Y _ 2O _ 3 thin films with surface root-mean-square roughness less than 0.5 nm were prepared in the range of 5 渭 m 脳 5 渭 m. The crystallization temperature of Y-Al-O thin films is higher than that of Y _ 2O _ 3 thin films, and the surface roughness of Y-Al-O films has little change after high temperature heat treatment. The preparation of Y-Al-O thin films on the substrate of Halogen alloy was studied in detail. The number of deposition layers and the rapid heat treatment temperature of Y-Al-O thin films were studied in detail. The influence of the dipping speed and the ratio of metal ions in the precursor on the properties of Y-Al-O thin films was investigated. Y-Al-O thin films with root-mean-square roughness of 1 nm were prepared in the range of 5 渭 m 脳 5 渭 m, which solved the crack problem of substrate edge films during the deposition of SDP thin films. The SDP strip with a length of 28 m, good consistency on both sides and surface RMS roughness in the range of 5 渭 m 脳 5 渭 m was successfully prepared. And deposited on the prepared SDP strip, the outer half maximum width 螖蠅 ~ (3. 64 掳) was obtained. The in-plane half-height 螖蠁 ~ (5.15) 掳IBAD-MgO films and the YBCO superconducting films with a critical current density of up to 2 MA/cm2 are obtained. The effect of rapid heat treatment time on the preparation of Y _ 2O _ 3 thin films by MOD method on the surface of YBCO thin films was studied. Y _ 2O _ 3 thin films with in-plane half-maximum width 螖蠁 ~ (4.61) 掳. The effect of high temperature heat treatment temperature on the preparation of CeO2 thin films on the surface of YBCO thin films was studied, and the outer half maximum width 螖蠅 ~ (16. 12 掳) was deposited. The in-plane half-height 螖蠁 ~ (5.02) 掳CeO2 thin films were prepared. The superconducting properties of YBCO thin films with CeO2 thin films were not significantly decreased after oxygen-filled annealing.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2;TM26

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