不同沉积温度下AZO透明导电薄膜的性能研究

发布时间：2018-02-01 23:54

  本文关键词： 透明导电 AZO薄膜 磁控溅射 沉积温度　出处：《热加工工艺》2017年22期 　论文类型：期刊论文

【摘要】：以纯度为99.99%氧化锌铝(w(Zn O)=98.00wt%,w(Al_2O_3)=2.00wt%)陶瓷靶为原料,利用直流磁控溅射法在普通白玻璃衬底上制备铝掺杂氧化锌(AZO)薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、四点探针测试仪和紫外可见光分光光度计等对薄膜的形貌、结构及光电性能进行分析。结果表明:薄膜具有c轴择优取向。随沉积温度升高,薄膜的结晶度先提高后下降,晶粒尺寸逐渐减小。当沉积温度为200℃时,可获得晶粒尺寸为18.30 nm、电阻率为4.1×10~(-3)Ω·cm、透过率为93.80%的AZO透明导电薄膜。
[Abstract]:The ceramic target with purity of 99.99% Zinc-Al _ 2O _ 3 / Zn _ 2O _ (98.00) w _ (t) and W / S _ 2O _ 3 / 2. 00 W _ (t) is used as raw material. Aluminum-doped zinc oxide (AZO) thin films were prepared on ordinary white glass substrates by DC magnetron sputtering. The morphology, structure and optoelectronic properties of the films were analyzed by four-point probe tester and UV-Vis spectrophotometer. The results show that the films have c-axis preferred orientation and increase with deposition temperature. The crystallinity of the films first increases and then decreases, and the grain size decreases gradually. When the deposition temperature is 200 鈩，

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