铜-二氧化硅凝胶薄膜的电化学制备及其光学性能

发布时间：2018-02-04 22:28

本文关键词： 二氧化硅溶胶铜复合薄膜氧化铟锡恒电位电沉积循环伏安法紫外-可见光谱光学带隙　出处：《电镀与涂饰》2017年09期 　论文类型：期刊论文

【摘要】：以CuCl_2·2H_2O和正硅酸乙酯(TEOS)作为前驱体,配制了透明稳定的Cu~(2+) SiO_2复合溶胶。采用循环伏安法研究了Cu~(2+)在该溶胶中的电化学性质,以恒电位法在氧化铟锡(ITO)导电玻璃表面沉积了凝胶复合薄膜。采用扫描电镜、能谱、X射线衍射对复合薄膜进行了表征,以紫外-可见光谱测试了薄膜的线性光学性能。结果表明,控制电位在-0.24~0.2 V和负于-0.24 V(相对于饱和甘汞电极)可分别制备出Cu~+ SiO_2和Cu SiO_2凝胶薄膜,前者的平均光学带隙宽度(Eg)为1.94 e V,略高于后者的1.92 eV。由于Cu在溶胶中是连续成核,导致了Cu SiO_2凝胶薄膜中的Cu颗粒大小不均匀(在几十纳米至几微米之间),吸收光谱在400~500 nm出现了Cu带间迁移的吸收峰。
[Abstract]:CuCl_2 路2H _ 2O and tetraethyl orthosilicate were used as precursors. A transparent and stable Cu~(2) SiO_2 composite sol was prepared. The electrochemical properties of Cu~(2) in the sol were studied by cyclic voltammetry. Gel composite films were deposited on the surface of indium tin oxide (ITO) conductive glass by potentiostatic method. The composite films were characterized by scanning electron microscopy (SEM) and energy dispersive X-ray diffraction (EDS). The linear optical properties of the films were measured by UV-Vis spectra. The Cu ~ + SiO_2 and Cu ~ + SiO_2 gel films were prepared at -0.24V and -0.24V (relative to saturated calomel electrode) at the control potential of -0.24V and -0.24V, respectively. The average optical band gap width (Egg) of the former is 1.94 EV, which is slightly higher than that of the latter (1.92 EV). The results show that the Cu particles in the SiO_2 gel film are not uniform in size (between tens of nanometers and a few microns), and the absorption spectra show a peak of Cu interband migration at 400nm.
【作者单位】：煤矿灾害动力学与控制国家重点实验室重庆大学资源及环境科学学院;
【分类号】：O648.17;TB383.2
【正文快照】： 金属(Au、Ag、Cu等)纳米颗粒与电介质基体(如Si O2、Ti O2、Ba Ti O3、Al2O3等)构成的复合材料具有优良的光学性能。Si O2有较大的介电常数和对红外光有较大的透射率,与金属构成的金属-Si O2复合材料已被广泛研究,以用于集成光学器件。制备铜纳米颗粒-介电复合材料常用的方法

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