电荷转移盐杂化纳米材料的可控制备和性质的研究

发布时间：2018-02-24 05:33

本文关键词： 电荷转移盐杂化纳米材料模板法异质结整流比场发射性质　出处：《燕山大学》2015年硕士论文　论文类型：学位论文

【摘要】：本文围绕着电荷转移盐杂化纳米材料的制备为主题,一方面以无机半导体材料和有机电荷转移盐为基本的构筑单元,利用模板法,合成了具有杂化界面的一维有机/无机异质结纳米线,并且通过实验条件的改变,可控的调节了异质结纳米线的形貌结构以及它的电学性质;另一方面,以碳的新型同素异形体和有机电荷转移盐为基本的构筑单元,利用气相沉积法,合成了有机/有机杂化纳米材料,并对其场发射性质进行了研究。主要包括以下几个方面:(1)利用模板法,制备出了Cu TCNQ/Cu S(TCNQ为7,7,8,8-四菁基对二苯甲烷)异质结纳米线,并且分别对大面积的异质结纳米线阵列和单根的异质结纳米线进行了形貌、电学性质的表征。研究表明,所制备出来的异质结纳米线拥有高的整流比,其中异质结纳米阵列的整流比会随着光照强度的增强而增大。这使得Cu TCNQ/Cu S异质结纳米线可能会成为新一代的光电器件。(2)通过改变实验的条件,制备出了四种不同结面积的Cu TCNQ/Cu S异质结纳米线,并且对其电学性质和形貌之间的关系进行了探究。研究表明,Cu TCNQ/Cu S异质结纳米线的二极管整流比会随着异质结结面积的增大而减小。这为我们想要获得高整流比的二极管材料提供了新的思路。(3)利用溶液聚合的方法在铜片上成功的制备了大面积的石墨炔薄膜,并对其形貌进行了表征。利用气相沉积法在石墨炔薄膜上长出Cu TCNQ纳米线,成功的制备出了石墨炔/Cu TCNQ杂化纳米材料,并对它的形貌以及场发射性能做了研究。研究表明,石墨炔/Cu TCNQ杂化纳米材料具有优良的场发射性质。通过对其功能函数进行了计算,结果表明其具有较低的功能函数,同时场发射稳定性试验表明石墨炔/Cu TCNQ杂化纳米材料的场发射稳定性很高。
[Abstract]:This paper focuses on the preparation of charge transfer salt hybrid nanomaterials. On the one hand, using inorganic semiconductor materials and organic charge transfer salts as the basic building units, the template method is used. One-dimensional organic / inorganic heterojunction nanowires with hybrid interface were synthesized. The morphology and structure of heterojunction nanowires and their electrical properties were controlled by changing the experimental conditions. Organic / organic hybrid nanomaterials were synthesized by Vapor deposition using new carbon isoforms and organic charge transfer salts as basic building units. The field emission properties of Cu TCNQ/Cu TCNQ were studied, including the following aspects: 1) using template method, Cu TCNQ/Cu TCNQ was prepared, which was 7? 7? 8? 8? Tetracyanine) heterojunction nanowires. The morphology and electrical properties of large area heterojunction nanowire arrays and single heterojunction nanowires were characterized respectively. The results show that the prepared heterojunction nanowires have a high rectifying ratio. The rectifying ratio of heterojunction nanoarrays increases with the increase of light intensity, which makes Cu TCNQ/Cu S heterojunction nanowires become a new generation of optoelectronic devices by changing the experimental conditions. Four kinds of Cu TCNQ/Cu S heterojunction nanowires with different junction areas were prepared. The relationship between electrical properties and morphology is also investigated. The results show that the diode rectifier ratio of Cu TCNQ/Cu S heterojunction nanowires decreases with the increase of heterojunction area, which is why we want to obtain high rectifier ratio. (3) large area graphite thin films were successfully prepared on copper substrates by solution polymerization. The Cu TCNQ nanowires were grown on graphene thin films by vapor deposition, and the graphene / Cu TCNQ hybrid nanomaterials were successfully prepared. The morphology and field emission properties of Cu / TCNQ hybrid nanomaterials were studied. Graphene / Cu TCNQ hybrid nanomaterials have excellent field emission properties. At the same time, the field emission stability of graphene / Cu TCNQ hybrid nanomaterials is very high.
【学位授予单位】：燕山大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1

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