ZnTe纳米线的可控掺杂及其表面等离子体增强的光电探测应用研究

发布时间：2018-02-25 10:15

本文关键词： ZnTe纳米线可控掺杂金纳米颗粒修饰光电探测器　出处：《合肥工业大学》2015年硕士论文　论文类型：学位论文

【摘要】：在过去的十年中,具有高的纵横比的一维半导体纳米结构,如纳米线(NWs),纳米带(NRs),碳纳米管(NTs)和多支链结构,由于其新颖的物理和化学性质已经吸引了相当多的研究兴趣。在半导体纳米结构这个巨大的家族中,II-VI族半导体纳米材料碲化锌(ZnTe)由于其独特的光学特性已得到了特别的关注和研究。然而本征的ZnTe纳米线电阻率过高导致其光电性能不够理想,限制了其在光电器件领域的应用。本文中采用了两种方法来提高ZnTe纳米线的光电特性,先是选取Ga/Ga2O3作为掺杂源利用热蒸发的方法实现了对ZnTe纳米线的可控掺杂,大大增加了它的光电流和暗电流；接着通过溶液法对ZnTe进行了金纳米颗粒的修饰,利用其表面等离子体共振效应增加了ZnTe纳米线对光的吸收。经过掺杂和修饰后的ZnTe纳米线对光的响应变的更加灵敏,更加适合应用于光电器件的制备。到目前为止,基于本征ZnTe纳米线的光电器件的性能仍不够理想,因此本文利用ZnTe:Ga纳米线／石墨烯形成的肖特基结和修饰金颗粒后的ZnTe纳米线构建了两种不同的光电探测器。经过分析,两种光电探测器都表现出非常好的稳定性和重复性。另外,ZnTe:Ga纳米线／石墨烯肖特基结光电探测器的光谱响应度和探测率分别达到4.17×103A/W和3.19×1013 cmHz1/2W-1,而修饰金颗粒的ZnTe光电探测器则为5.11×103 AW-1和3.28×1013 cmHZ1/2W-1。同本征ZnTe纳米线相比,两种新型光电探测器的响应率和探测能力都得到了很大的提高。最后,我们希望通过Ga掺杂和金颗粒修饰使ZnTe纳米线在未来可以构建更高性能的光电器件。
[Abstract]:Over the past decade, one-dimensional semiconductor nanostructures with high aspect ratios, such as nanowires, nanobelts, carbon nanotubes (NTs) and multi-branched structures, have been developed. Due to its novel physical and chemical properties, it has attracted considerable interest. In this huge family of semiconductor nanostructures, the II-VI semiconductor nanomaterials Zn-ZnTeTe have been obtained due to their unique optical properties. Special attention and research. However, the intrinsic resistivity of ZnTe nanowires is too high, resulting in its optoelectronic performance is not ideal. In this paper, two methods are used to improve the photoelectric properties of ZnTe nanowires. Firstly, Ga/Ga2O3 is chosen as the dopant source to realize the controllable doping of ZnTe nanowires. The photocurrent and dark current of ZnTe were greatly increased, and then the gold nanoparticles were modified by solution method. The light absorption of ZnTe nanowires is increased by using its surface plasmon resonance effect. The photoresponse of doped and modified ZnTe nanowires becomes more sensitive, which is more suitable for the fabrication of optoelectronic devices. The performance of photovoltaic devices based on intrinsic ZnTe nanowires is still not ideal. Therefore, two kinds of photodetectors have been constructed by using Schottky junctions formed by ZnTe:Ga nanowires / graphene and ZnTe nanowires modified with gold particles. In addition, the spectral responsivity and detectivity of ZnTeGa nanowire / graphene Schottky junction photodetectors are 4.17 脳 103 / W and 3.19 脳 10 ~ (13) cm Hz1 / 2W-1, respectively, while the ZnTe optoelectronic photodetectors modified with gold particles are very stable and reproducible. The detectors are 5.11 脳 10 ~ 3 AW-1 and 3.28 脳 10 ~ (13) cm HZ1 / 2W-1.Compared with intrinsic ZnTe nanowires, The responsivity and detection ability of the two new photodetectors have been greatly improved. Finally, we hope that ZnTe nanowires will be able to construct higher performance optoelectronic devices in the future through Ga doping and gold particle modification.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1

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