硒化铟纳米薄膜的制备及其电学和光电性能研究

发布时间：2018-03-10 07:00

本文选题：硒化铟　切入点：二维材料　出处：《哈尔滨工业大学》2017年博士论文　论文类型：学位论文

【摘要】：二维层状半导体材料表现出不同于块体材料的物理和化学性质,在纳米电子器件和纳米光电子器件领域具有巨大的应用前景,因此成为材料和微电子等领域的研究热点。然而稳定的、高性能的二维层状半导体材料还有待进一步探索。硒化铟(InSe和In_2Se_3)是典型的IIⅠ-ⅤI族层状半导体材料,块体硒化铟表现出良好的稳定性、高的电子迁移率和高的光吸收效率,可以应用于高性能电子和光电子器件。目前关于二维硒化铟薄膜的研究甚少,很多性能还有待开发。本文探索了二维硒化铟薄膜的制备方法,并构筑了多层InSe场效应晶体管和光电晶体管,研究了多层InSe电子输运性质和光探测性能。制备了InSe-CuInSe_2平面p-n异质结,研究了其电学和光伏性能。构筑了二维In_2Se_3薄膜的力学传感器件和电子皮肤器件,系统研究了其对人体活动的监测性能。本文通过机械剥离法,在不同衬底成功制备二维β-InSe薄膜,并揭示了InSe薄膜厚度对拉曼光谱和荧光光谱的影响规律。构筑了多层InSe场效应晶体管并研究了其电学输运性质,得到了媲美单晶硅器件的性能。铝、钛、铟和铬四种金属接触电极的InSe场效应晶体管的电学输运性能与四种金属功函数大小顺序不一致,与四种金属在InSe表面的表面粗糙度一致。实验和理论模拟结果证明金属d轨道电子的数量决定了金属与二维InSe接触电阻的数值,金属铬是较好的电极材料。施加正负栅极电压,在常压和真空条件下多层InSe场效应晶体管的表现出不同的不稳定性。实验结果说明栅极电压诱导的不稳定性主要源自栅极电压可以调控InSe表面的氧气和水分的吸附和解吸过程。比较不同介电层InSe场效应晶体管的电学输运性能,发现PMMA/氧化物双介电层结构显著提高InSe的电学输运性能。表面粗糙度和接触角测试结果证实PMMA/氧化物双介电层可以有效屏蔽氧化物介电层表面产的库仑杂质散射和极性声子散射。建立了多层InSe的多次吸收反射的光吸收模型,构筑了多层InSe光电晶体管并研究了光探测能力。理论模拟说明InSe对光的吸收与厚度紧密相关,呈现非线性关系。InSe光电晶体管在不同波长和光照强度条件下激发,表现出宽的光谱探测区间,计算的光响应值和光探测值曲线证明该光电探测器具有超高的光电探测能力。多次弯曲后,柔性透明InSe薄膜光电探测器表现出良好的稳定性。发展了简单固相法制备二维InSe-CuInSe_2平面p-n异质结的新方法,并研究了该异质结的电学和光电转化性能。基于该异质结的二极管的Ⅰ-Ⅴ电流曲线表现出显著的整流效应,计算的理想因子是1.3,证明扩散电流主导;在光激发下,该异质结表现出显著的光伏效应和3.5%的光电转化效率。发展了常压化学气相沉积法制备二维α-In_2Se_3薄膜的新方法。在氟金云母基底上成功制备出单晶尺寸100μm的、少层三角形状的单晶In_2Se_3薄膜。研究不同基底二维α-In_2Se_3薄膜的生长机理,通过改变氟金云母基底的表面形貌,成功制备出各种大面积的、图案化的二维In_2Se_3薄膜。开发了二维In_2Se_3薄膜的力学传感器并研究传感器对人体动作的监测性能。在不同的拉伸和压缩力作用下,二维In_2Se_3薄膜表现出显著的压阻效应和良好的稳定性。制备了二维In_2Se_3薄膜的力学传感器和传感器阵列,监测人体动作实验结果证实该传感器对人体活动具有高的灵敏度和良好的稳定性,传感器阵列表现出良好的空间分辨率。本论文的工作丰富了硒化铟薄膜的制备和光电性能研究,为其在高性能微电子器件、光电子器件和力学传感器件等相关领域的应用打下坚实的基础。
[Abstract]:Two dimensional layered semiconductor materials exhibit physical and chemical properties different from bulk materials, it has great application prospect in the field of nano devices and optoelectronic devices, thus become the research hotspot in the field of materials and microelectronics. However, stable, two dimensional layered semiconductor material with high performance remains to be further explored. (indium selenide InSe and In_2Se_3 II) is a typical I-V I layered semiconductor materials, bulk indium selenide showed good stability, high electron mobility and high light absorption efficiency, can be used in high performance electronic and optoelectronic devices. The current research on two-dimensional indium selenide thin films have many properties, and to be developed. This paper explored the preparation method of two-dimensional indium selenide thin films, and build a multilayer InSe field effect transistor and phototransistor, study the multilayer InSe electron transport properties and optical detection. . preparation of InSe-CuInSe_2 plane p-n heterojunction, studied the electrical and photovoltaic properties. To build a mechanical sensor and electronic device skin two-dimensional In_2Se_3 film, system to study the human activity monitoring performance. Through the mechanical stripping method at different substrate prepared two-dimensional beta -InSe film, and reveals the the effect of InSe film thickness on Raman spectra and fluorescence spectra. Build a multilayer InSe field effect transistor and study its electrical transport properties, the performance is comparable to monocrystalline silicon devices. Aluminum, titanium, chromium and indium four metal contact electrode electrical InSe field effect transistor and transport properties of four kinds of metal work function sequence is not consistent, consistent with the degree of four kinds of metal on the surface of InSe surface roughness. The experimental and theoretical simulation results show that the number of metal d electrons determines the contact resistance of the metal and 2D InSe The value of chromium metal electrode material is better. Applying positive and negative gate voltage, at atmospheric pressure and vacuum conditions of multilayer InSe field effect transistors exhibit different instability. Experimental results show that the gate voltage induced by the instability of the gate voltage can be controlled from the surface of InSe oxygen and moisture adsorption and desorption processes of different. The dielectric layer InSe field effect transistor electrical transport properties, PMMA/ double oxide dielectric layer structure of InSe significantly improved transport properties. Surface roughness and contact angle test results confirmed that the PMMA/ double oxide dielectric layer can effectively shield the oxide dielectric layer formed on the surface of the Coulomb impurity scattering and polar phonon scattering. The multilayer InSe absorb multiple reflection light absorption model was established, build a multilayer InSe phototransistor and study the optical detection ability. Theoretical simulation shows that InSe of light Closely related to the absorption and thickness, non-linear relationship between.InSe phototransistor in different wavelength and light intensity under the condition of excitation, exhibiting a wide spectrum range, and light detection value curve show that the photoelectric detector has high photoelectric detection ability response calculation of light. Multiple bending, flexible transparent InSe thin film photoelectric the detector shows good stability. The development of a simple solid-phase preparation method of two-dimensional InSe-CuInSe_2 plane p-n heterojunction, and studied the electrical heterojunctions and photoelectric conversion properties of the heterojunction diode. The I-V curves show significant effect of current rectifier based on ideal factor calculation is 1.3, that of diffusion the current dominant; under optical excitation, the heterojunction shows the photoelectric conversion efficiency of photovoltaic effect and the 3.5% significant. The development of atmospheric pressure chemical vapor deposition method for preparing two-dimensional alpha -In_2Se_ A new method of 3 films. In fluorophlogopite substrates prepared by the crystal size of 100 m, single crystal In_2Se_3 film layer less triangular shape. The growth mechanism of different substrate -In_2Se_3 films by two-dimensional alpha, the change of surface morphology of fluorophlogopite substrates, successfully prepared a variety of large, two-dimensional In_2Se_3 patterned films. Monitoring the performance of In_2Se_3 films developed a two-dimensional mechanical sensor and study the sensor on the human body movement. In different tensile and compressive force, the two-dimensional In_2Se_3 films exhibit a striking piezoresistive effect and good stability. The mechanical sensor and sensor array of two-dimensional In_2Se_3 films were prepared by the monitoring of human action experimental results show that the sensor has high sensitivity and good stability of human activities, sensor arrays exhibit good spatial resolution. This thesis enriches the The preparation and photoelectric properties of indium selenide thin films will lay a solid foundation for its application in related fields, such as high-performance microelectronic devices, optoelectronic devices and mechanical sensors.

【学位授予单位】：哈尔滨工业大学
【学位级别】：博士
【学位授予年份】：2017
【分类号】：TB383.2;TQ133.53

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